발행물

전체 논문

48

21

Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park, Hyungjin Kim
Applied Physics Letters, 2020.10

22

Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park
Electronics, 2020.07

23

Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering
Jinju Lee, Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Chandreswar Mahata, Eunjin Sim, Muhammad Ismail, Yawar Abbas, Haider Abbas, Dong Keun Lee, Min-Hwi Kim, Yoon Kim, Changhwan Choi, Byung-Gook Park, Sungjun Kim
ACS applied materials & interfaces, 2020.07

24

Fabrication and Characterization of TiOx Memristor for Synaptic Device Application
Tae-Hyeon Kim, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park
IEEE Transactions on Nanotechnology, 2020.05

25

Memristive and synaptic characteristics of nitride-based heterostructures on si substrate
Mehr Khalid Rahmani, Min-Hwi Kim, Fayyaz Hussain, Yawar Abbas, Muhammad Ismail, Kyungho Hong, Chandreswar Mahata, Changhwan Choi, Byung-Gook Park, Sungjun Kim
Nanomaterials, 2020.05

26

HfOx-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application
DK Lee, MH Kim, S Bang, TH Kim, YJ Choi, S Kim, S Cho, BG Park
Semiconductor Science and Technology, 2020.03

27

Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM
Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park
IEEE Transactions on Electron Devices, 2020.03

28

Reliable organic memristors for neuromorphic computing by predefining a localized ion-migration path in crosslinkable polymer
Hea-Lim Park, Min-Hwi Kim, Min-Hoi Kim, Sin-Hyung Lee
Nanoscale, 2020.10

29

SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory
Chandreswar Mahata, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon-Joon Choi, Sungjun Kim, Byung-Gook Park
Applied Physics Letters, 2019.05

30

Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation
Dong Keun Lee, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, Byung-Gook Park
Solid-State Electronics, 2019.04