Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling
Jae Yoon Lee, Youngmin Kim, Min-Hwi Kim, Seoyeon Go, Seung Wook Ryu, Jae Yeon Lee, Tae Jung Ha, Soo Gil Kim, Seongjae Cho, Byung-Gook Park
Vacuum, 2019.03
32
Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
Sungjun Kim, Jia Chen, Ying-Chen Chen, Min-Hwi Kim, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Muhammad Ismail, Yi Li, Xiang-Shui Miao, Yao-Feng Chang, Byung-Gook Park
Nanoscale, 2018.11
33
Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application
Suhyun Bang, Min-Hwi Kim, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park
Solid-State Electronics, 2018.12
34
Dual functions of V/SiOx/AlOy/p++ Si device as selector and memory
Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang, Byung-Gook Park
Nanoscale research letters, 2018.12
35
Concurrent events of memory and threshold switching in Ag/SiNx/Si devices
Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Ying-Chen Chen, Yao-Feng Chang, Muhammad Ismail, Yoon Kim, Kyung-Chang Ryoo, Byung-Gook Park
Journal of Vacuum Science & Technology B, 2018.09
36
Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Byung-Gook Park
IEEE Transactions on Nanotechnology, 2018.05
37
Scaling effect on silicon nitride memristor with highly doped Si substrate
Sungjun Kim, Sunghun Jung, Min‐Hwi Kim, Ying‐Chen Chen, Yao‐Feng Chang, Kyung‐Chang Ryoo, Seongjae Cho, Jong‐Ho Lee, Byung‐Gook Park
Small, 2018.05
38
Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model
Min-Hwi Kim, Sungjun Kim, Kyung-Chang Ryoo, Seongjae Cho, Byung-Gook Park
Journal of Computational Electronics, 2018.03
39
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device
Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, Byung-Gook Park
Solid-State Electronics, 2018.02
40
Analog synaptic behavior of a silicon nitride memristor
Sungjun Kim, Hyungjin Kim, Sungmin Hwang, Min-Hwi Kim, Yao-Feng Chang, Byung-Gook Park