발행물

전체 논문

48

41

Understanding reset transitions in Ni/SiNx/Si resistive random-access memory
Sungjun Kim, Min-Hwi Kim, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2017.10

42

Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes
Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2017.10

43

Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x
Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Byung-Gook Park
Applied Physics Letters, 2017.07

44

Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park
Solid-State Electronics, 2017.06

45

Integrate-and-fire (I&F) neuron circuit using resistive-switching random access memory (RRAM)
Min-Woo Kwon, Sungjun Kim, Min-Hwi Kim, Jungjin Park, Hyungjin Kim, Sungmin Hwang, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2017.05

46

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory
Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Tae-Hyeon Kim, Yoon Kim, Byung-Gook Park
Materials, 2017.04

47

Nano-cone resistive memory for ultralow power operation
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Seongjae Cho, Byung-Gook Park
Nanotechnology, 2017.02

48

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device
Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen, Jong-Ho Lee, Byung-Gook Park
Physical Chemistry Chemical Physics, 2017.07