Abstract Memtransistors are active analog memory devices utilizing ionic memristive materials as channel layers. Since their introduction, the term “memtransistor” has widely been adopted for transistors exhibiting nonvolatile memory characteristics. Currently, memtransistor devices possessing both transistor on/off functionality and nonvolatile memory characteristics include ferroelectric field‐effect transistors (FeFETs) and charge‐trap flash (floating gate), yet ionic memtransistors have not matched their performance. Here a facile and extendable lithium (Li)‐well oxide memtransistor (LWOM) is reported as a promising candidate. Forming a Li well, analogous to an n + well beneath electrodes in n‐metal‐oxide‐semiconductor field‐effect transistor (MOSFET) processes, induces Li⁺‐ion migration via write V DS , achieving analog memory characteristics through Schottky barrier modulation. LWOM enables low‐voltage weight updates and precise gate‐controlled weight update characteristics. Analysis via 3D secondary ion mass spectrometry (SIMS) confirms Li‐ion redistribution and the resistance‐switching mechanism. A 21 × 21 crossbar array demonstrates 99.31% operational yield and successful weight updates to target conductance values. Fabricated using mature oxide semiconductor technology with a 230 °C thermal budget and a simple process, LWOM stands as a strong contender for next‐generation nonvolatile memory and artificial neural network (ANN) acceleration hardware.

Abstract Inexpensive, high‐speed deposition techniques that ensure uniformity, scalability, wide applicability, and tunable thickness are crucial for the practical application of 2D materials. In this work, rapid drying is identified as a key mechanism for pioneering two high‐speed wet deposition methods: hot dipping and air knife sweeping (AKS). Both techniques allow thickness control proportional to flake concentration, achieving tiled monolayers and pinhole‐free coverage across the entire substrate, as long as evaporation outpaces flake diffusion. AKS prevents non‐uniformity along substrate edges by eliminating contact line pinning. The achieved deposition speed of 0.21 m 2 min −1 with AKS significantly surpasses traditional methods, enabling the equipment for large substrates > 1 m 2 . Combined with the ultralow debonding force for mechanically susceptible flexible display production and short‐circuit‐proof nanometer‐thin capacitors with capacitance comparable to commercial multilayer ceramic capacitors (MLCCs), these new protocols showcase simple and swift solutions for manufacturing 2D materials‐based nanodevices.