Investigation of chlorine-induced damage in oxide semiconductor transistors
J. W. Na, S. Lee, H. Min, G. Jang, M Song, I. S. Lee, J.-H. Yang, M. J. Kim, K.-B. Chung, S. J. Kim*
ACS Applied Electronic Materials, 2025
2
Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer
J. W. Na, K. Moon, I. S. Lee, K. Park, H. S. Kim, S. J. Kim, H. J. Kim
Applied Physics Letters, 2025
3
Impact of tetrakis(ethylmethylamino)-based precursor and oxygen source selection on atomic layer deposition of ferroelectric HfXZr1-XO2 thin films
J.-H. Kim, S. Song, D. M. Narayan, D. N. Le, T. T. H. Chu, M. Lee, G. Park, S. Lee, J. Kang, J. Spiegelman, M. Benham, S. J. Kim, R. Choi, J. Kim
Applied Surface Science, 2025
4
Thermal budget study to simultaneously achieve low-temperature (<400°C) process and high endurance of ferroelectric Hf0.5Zr0.5O2 thin films
J. Kang, S. Park, H. R. Park, S. Lee, J.-H. Kim, M. Lee, D. M. Narayan, J. G. Yoo, G. Park, H. S. Kim, Y. C. Jung, R. Choi, J. Kim*, S. J. Kim*
Applied Physics Letters, 2025
5
BEOL compatible ultra-low operating voltage (0.5 V) and preconfigured switching polarization states in effective 3 nm ferroelectric HZO capacitors
M. Lee, J.-H. Kim, D. N. Le, S. Lee, S.-U. Song, R. Choi, Y. Ahn, S. W. Ryu, P.-R. Cha, C.-Y. Nam, S. Park, J. Kang, S. J. Kim*, J. Kim*
in Proc. IEEE Symposium on VLSI Technology and Circuits, 2024
6
Hafnium oxide-based ferroelectric devices for in-memory computing: resistive and capacitive approaches
M. Lee, D. M. Narayan, J.-H. Kim, D. N. Le, S. Shirodkar, S. Park, J. Kang, S. Lee, Y. Ahn, S. W. Ryu, S. J. Kim*, J. Kim*
ACS Applied Electronic Materials, 2024
7
Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources
S. Lee, Y. C. Jung, H. R. Park, S. Park, J. Kang, J. Jeong, Y. Choi, J.-H. Kim, J. Mohan, H. S. Kim, J. Kim*, S. J. Kim*
Solid-State Electronics, 2024
8
A study on the ferroelectric properties of Hf0.5Zr0.5O2 thin films using various annealing methods
Y. Choi, J. Jeong, S. J. Kim*
Journal of Telecommunications and Information, 2024
9
Toward low-thermal-budget hafnia-based ferroelectrics via atomic layer deposition
J.-H. Kim, T. Onaya, H. R. Park, Y. C. Jung, D, N. Le, M. Lee, H. Hernandez-Arriaga, Y. Zhang, E. H. R. Tsai, C.-Y. Nam, T. Nabatame, S. J. Kim*, J. Kim*
ACS Applied Electronic Materials, 2023
10
Strategy for low temperature HZO ferroelectric capacitors for back-end of line applications
J.-H. Kim, M. Lee, S. Lee, Y. C. Jung, R. Choi, H. J. Kim, S. J. Kim, J. Kim
in Proc. 7th IEEE Electron Devices Technology and Manufacturing, 2023