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151
Reduction of positive-bias-stress effects in bulk-accumulation amorphous-InGaZnO TFTs
Seonghyun Jin, Tae-Woong Kim, Young-gul Seol, Mallory Mativenga, Jin Jang
IEEE Electron Device Letters, 2014
152
Effect Of Channel Layer Thickness On The Performance of Indium−Zinc−Tin Oxide Thin Film Transistors Manufactured By Inkjet printing
Christophe Avis, Hye Rim Hwang, Jin Jang
Applied Materials & Interfaces, 2014
153
Intrinsic channel mobility of amorphous, in-Ga-Zn-O thin-film transistors by a gated four-probe method
Mallory Mativenga, Sungjin Ahn, Suhui Lee, Jaegwang Um, Di Geng, Ravi K. Mruthyunjaya, Gregory N. Heiler, Timothy J. Tredwell, Jin Jang
IEEE Transactions on Electron Devices, 2014
154
High-performance inverted tandem polymer solar cells utilizing thieno[3,4-c]pyrrole-4,6-dione copolymer
Abd. Rashid bin Mohd Yusoff, Seung Joo Lee, Jaeyeon Kim, Fabio Kurt Shneider, Wilson Jose da Silva, Jin Jang
ACS Applied Materials & Interfaces, 2014
155
Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors
Jae Gwang Um, Mallory Mativenga, Piero Migliorato, Jin Jang
Solid State Communications, 2014
156
Effect of ZnO:Cs2Co3 on the performance of organic photovoltaics
Hyeong Pil Kim, Abd Rashid bin Mohd Yusoff, Hee Jae Lee, Seung Joo Lee, Hyo Min Kim, Gi Jun Seo, Jun Ho Youn, Jin Jang
Nanoscale Research Letters, 2014
157
Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation
Sungjin An, Mallory Mativenga, Youngoo Kim, Jin Jang
Applied Physics Lettters, 2014
158
Long life-time amorphous-InGaZnO TFT-based shift register using a reset clock signal
Hoon Jeong, Byung Kook Choi, Hoon-Ju Chung, Sang Gul Lee, Yong Min Ha, Jin Jang
IEEE Electron Device Letters, 2014
159
Removal of negative-bias-illumination-stress instability in amorphous-InGaZnO thin-film transistors by top-gate offset structure
Suhui Lee, Mallory Mativenga, Jin Jang
IEEE Electron Device Letters, 2014
160
Infinite output resistance of corbino thin-film transistors with an amorphous-InGaZnO active layer for large-area AMOLED displays
Mallory Mativenga, Su Hwa Ha, Di Geng, Dong Han Kang, Ravi K. Mruthyunjaya, Gregory N. Heiler, Timothy J. Tredwell, Jin Jang
IEEE Transactions on Electron Devices, 2014
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