Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc thin film transistors

Improving the lifetime of a polymer light-emitting diode by introducing solution processed tungsten-oxide

Transparent flexible organic solar cells with 6.87% efficiency manufactured by an all-solution process

Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

Increase of mobility in dual gate amorphous-InGaZnO4 thin-film transistors by pseudo-doping

Effect of incidence angle and polarization on the optimized layer structure of organic solar cells

Extremely stable all solution processed organic tandem solar cells with TiO2/GO recombination layer under continuous light illumination

Effect of SiO2 and/or SiNx passivation layer on thermal stability of self-aligned coplanar amorphous indium-gallium-zinc-oxide thin-film transistors

Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10K

Achieving high performance oxide TFT-based inveters by use of dual-gate configurations with floating and biased secondary gates