Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture

Enhanced Interfacial Integrity of Amorphous Oxide Thin-Film Transistors by Elemental Diffusion of Ternary Oxide Semiconductors

Preface-The 5th International Conference on Advanced Electromaterials (ICAE)

Photoactivated high-k lanthanum oxide-aluminum oxide (La2O3-Al2O3) alloy-type gate dielectrics for low-voltage-operating flexible transistors

Locally Controlled Sensing Properties of Stretchable Pressure Sensors Enabled by Micro-Patterned Piezoresistive Device Architecture

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

Highly Scalable and Robust Mesa-Island-Structure Metal-Oxide Thin-Film Transistors and Integrated Circuits Enabled by Stress-Diffusive Manipulation

In-Plane Amorphous Oxide Ionotronic Devices and Circuits with Photochemically Enabled Favorable Interfaces

Flexible Metal Oxide Semiconductor Devices Made by Solution Methods

Dual-gate crystalline oxide-nanowire field-effect transistors utilizing ion-gel gate dielectric