Changing the main architecture of the segmentation model alone maintained segmentation performance within ischemic-stroke cohorts, while achieving better classification in broader disease populations. This study highlights the need for deep-learning models to be validated not only for segmentation performance within target disease cohorts but also across diverse clinical environments to ensure practical utility.

Herein, we present a detailed analysis of the effects of O2 plasma treatment on the AlGaN barrier volume trap states in an Al0.45Ga0.45N/GaN high-electron mobility transistor. Compared to that of the as-grown sample, the single short-pulse <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GS}}$ </tex-math></inline-formula> characterization of the plasma-treated sample exhibited lower charge trapping inside the AlGaN barrier. The 1/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}$ </tex-math></inline-formula> low-frequency noise characterization revealed a significant reduction of approximately 67% in the volume trap density of the AlGaN barrier layer after O2 plasma treatment. This was achieved by the formation of Al–O and Ga–O bonds via the penetration of oxygen ions into the AlGaN bulk, which resulted in reduced trap state density in the AlGaN barrier. In addition, the Schottky characteristics were improved notably. Consequently, the O2 plasma-treated sample did not display current collapse and showed steady drain current output under the reverse-sweep drain-stress bias conditions. Furthermore, the plasma treatment significantly reduced the RF transconductance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${g}_{m}$ </tex-math></inline-formula> ) collapse in the as-grown sample, and significantly increased the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{T}/{f}_{\text {max}}$ </tex-math></inline-formula> of the plasma-treated sample from 65/70 to 120/230 GHz for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{g}$ </tex-math></inline-formula> = 80 nm devices, respectively. Last, the O2 plasma-treated sample showed substantial improvements in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{\text {out}\_\max}$ </tex-math></inline-formula> , power added efficiency (PAE), and linear gain from 1.25 W/mm, 20%, and 15 dB to 2.4 W/mm, 50%, and 19 dB, respectively.

Conventional techniques to characterize the carrier transport properties in high-electron-mobility transistors do not account for the effect of each individual unit process and device integration, and can be challenging to use for short-channel devices. To overcome this, we have developed a new technique that consists of measurement and analysis of the transconductance scaling behavior. The proposed <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${g}_{m}$ </tex-math></inline-formula> modeling technique yielded the effective mobility, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu _{n\_{}{\textit {eff}}}$ </tex-math></inline-formula> , and saturation velocity, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${v}_{\textit {sat}}$ </tex-math></inline-formula> for fabricated InxGa <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{1}-{x}}$ </tex-math></inline-formula> As Quantum-Well (QW) HEMTs, correlating the carrier transport properties to the device characteristics. This helps illuminate the physics of the carrier transport properties of HEMTs from the mobility relevant to the velocity saturation regimes.

Purpose: This study explores village education activists’ experiences with school-community linked education. Method: Focus group interviews (FGI) were conducted with six activists in P regions, and qualitative content analysis (QCA) was used. Results: Four key findings emerged: (1) Persistent efforts and strategic planning establish connections, (2) Direct experience fosters understanding, but broad change remains challenging, (3) Integration with formal curricula enhances sustainability, and (4) External support has both benefits and risks. The study highlights the complexities of school-community collaboration. Conclusion: Based on these findings, this study proposes educational implications for ensuring the sustainability of school-community linked education.

This study aimed to calculate ventilated carbon dioxide (CO2) and CO2 absorption by plants in a carbon dioxide (CO2) supplemental greenhouse for tomato cultivation during the winter season using a model equation in order to predict the current CO2 concentration and next CO2 supply. A targeted CO2 concentration (600 μmol·mol-1) was supplied from 10 a.m. to 13 p.m. from January 18, 2022 to March 12, 2022 using a CO2 type of fertilizer operated with LPG (liquefied petroleum gas). The ventilation rate ranged from 9.66 to 26.49 m3·m-2·h-1 at greenhouse temperature of 16 to 34°C and relative humidity (RH) of 65 to 93%. The external temperature was in the range of 3 to 20°C and external RH was 42 to 95%. The calculated net assimilation rate was in the range of 5.6 to 11.1 g·m-2·h-1, and the amount of ventilated CO2 ranged from 1.35 to 3.88 g·m-2·h-1. When the CO2 concentration (Ci) was lower than the target CO2 concentration (Cg) at the starting time of CO2 fertilization, the calculated first CO2 supply was in the range of 17.79 to 28.18 g·m-2·h-1. When the CO2 concentration at a certain time (Ct) was lower than the targeted CO2 concentration (Cg) after t hours of supply, the next CO2 supply was between 3.0 and 32.6 g·m-2·h-1. The photosynthesis rate measured at the 83 DAT showed the maximum increase with the 600 µmol·mol-1 of CO2 supplement under the 400 µmol·m-2·s-1 of PPFD, whereas the 800 µmol·mol-1 of CO2 supplement results into its maximum increase under all the PPFD levels higher than 600 µmol·m-2·s-1. Integrating all of the results suggests that during the winter season given the low light intensity, a CO2 supply exceeding 800μmol·mol-1 does not proportionally increase the net assimilation rate; thus, the CO2 supply efficiency appears to be affected more by the ventilated CO2 loss than by the net assimilation rate. These model equations can be used to control the CO2 fertilization in order to improve the yields of fruit vegetables in greenhouses.

We present a systematic study on the gate length ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{{g}}\text {)}$ </tex-math></inline-formula> scaling behavior and the impact of the side-recess spacing ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {side}}\text {)}$ </tex-math></inline-formula> on dc and high-frequency characteristics of In0.8Ga0.2As quantum-well (QW) high-electron-mobility transistors (HEMTs) with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{{g}}$ </tex-math></inline-formula> from 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> m to 20 nm, for the purpose of understanding the scaling limit of maximum oscillation frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}\text {)}$ </tex-math></inline-formula> and thereby demonstrating terahertz devices. The fabricated In0.8Ga0.2As QW HEMTs with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{{g}} =20$ </tex-math></inline-formula> nm and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {side}} =150$ </tex-math></inline-formula> nm exhibited values of drain-induced-barrier-lowering (DIBL) of 60 mV/V, current-gain cutoff frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{{T}}\text {)}$ </tex-math></inline-formula> of 0.75 THz, and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}$ </tex-math></inline-formula> of 1.1 THz, while the device with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {side}} =50$ </tex-math></inline-formula> nm showed DIBL of 110 mV/V and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{{T}}$ </tex-math></inline-formula> / <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}$ </tex-math></inline-formula> of 0.72/0.53 THz. It was central to strictly control short-channel effects (SCEs) from the perspective of DIBL to maximize the improvement of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}$ </tex-math></inline-formula> , as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{{g}}$ </tex-math></inline-formula> was scaled down deeply. In an effort to understand the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{{g}}$ </tex-math></inline-formula> scaling behavior of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}$ </tex-math></inline-formula> , we carried out the small-signal modeling for both types of devices and found that the increase of the intrinsic output conductance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${g}_{\text {oi}}\text {)}$ </tex-math></inline-formula> played a critical role in determining <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}$ </tex-math></inline-formula> in short- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{{g}}$ </tex-math></inline-formula> HEMTs. On the contrary, the fabricated devices with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {side}} =150$ </tex-math></inline-formula> nm exhibited a tight control of SCEs at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{{g}}$ </tex-math></inline-formula> of 20 nm. As a result, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}$ </tex-math></inline-formula> in those devices was boosted to 1.1 THz, and more importantly this high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}$ </tex-math></inline-formula> was maintained even as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{{g}}$ </tex-math></inline-formula> was scaled down to 20 nm. The results in this work represent the best balance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{{T}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}$ </tex-math></inline-formula> in any transistor technology on any material system, displaying both <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{{T}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}$ </tex-math></inline-formula> in excess of 700 GHz simultaneously.

We present a fully analytical model and physical investigation on the source resistance (<i>R_S</i>) in In<i>_x</i>Ga<i>_1-x</i>As quantum-well high-electron mobility transistors based on a three-layer TLM system. The <i>R_S</i> model in this work was derived by solving the coupled quadratic differential equations for each current component with appropriate boundary conditions, requiring only six physical and geometrical parameters, including ohmic contact resistivity (<i>ρ_c</i>), barrier tunneling resistivity (<i>ρ_barrier</i>), sheet resistances of the cap and channel regions (<i>R_{sh_cap}</i> and <i>R_{sh_ch}</i>), side-recessed length (<i>L_side</i>) and gate-to-source length (<i>L_gs</i>). To extract each model parameter, we fabricated two different TLM structures, such as <i>cap-TLM</i> and <i>recessed-TLM</i>. The developed <i>R_S</i> model in this work was in excellent agreement with the <i>R_S</i> values measured from the two TLM devices and previously reported short-<i>L_g</i> HEMT devices. The findings in this work revealed that barrier tunneling resistivity already played a critical role in reducing the value of <i>R_S</i> in state-of-the-art HEMTs. Unless the barrier tunneling resistivity is reduced considerably, innovative engineering on the ohmic contact characteristics and gate-to-source spacing would only marginally improve the device performance.

Changing the main architecture of the segmentation model alone maintained segmentation performance within ischemic-stroke cohorts, while achieving better classification in broader disease populations. This study highlights the need for deep-learning models to be validated not only for segmentation performance within target disease cohorts but also across diverse clinical environments to ensure practical utility.

Herein, we present a detailed analysis of the effects of O2 plasma treatment on the AlGaN barrier volume trap states in an Al0.45Ga0.45N/GaN high-electron mobility transistor. Compared to that of the as-grown sample, the single short-pulse <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GS}}$ </tex-math></inline-formula> characterization of the plasma-treated sample exhibited lower charge trapping inside the AlGaN barrier. The 1/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}$ </tex-math></inline-formula> low-frequency noise characterization revealed a significant reduction of approximately 67% in the volume trap density of the AlGaN barrier layer after O2 plasma treatment. This was achieved by the formation of Al–O and Ga–O bonds via the penetration of oxygen ions into the AlGaN bulk, which resulted in reduced trap state density in the AlGaN barrier. In addition, the Schottky characteristics were improved notably. Consequently, the O2 plasma-treated sample did not display current collapse and showed steady drain current output under the reverse-sweep drain-stress bias conditions. Furthermore, the plasma treatment significantly reduced the RF transconductance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${g}_{m}$ </tex-math></inline-formula> ) collapse in the as-grown sample, and significantly increased the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{T}/{f}_{\text {max}}$ </tex-math></inline-formula> of the plasma-treated sample from 65/70 to 120/230 GHz for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{g}$ </tex-math></inline-formula> = 80 nm devices, respectively. Last, the O2 plasma-treated sample showed substantial improvements in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{\text {out}\_\max}$ </tex-math></inline-formula> , power added efficiency (PAE), and linear gain from 1.25 W/mm, 20%, and 15 dB to 2.4 W/mm, 50%, and 19 dB, respectively.