IEEE International Electron Devices Meeting (IEDM)

High-Performance III-V devices for future logic applications

2014

Symposia on VLSI Technology and circuits

Electrostatics and Performance Benchmarking using all types of III-V Multi-gate FinFETs for sub 7nm Technology Node Logic Application

2014

IEEE International Electron Devies Meeting

Sub-100 nm InGaAs Quantum-Well (QW) Tri-Gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for Low-Power Logic Applications

2013

Solid State Devices and Materials

High-Frequency Characteristics of InGaAs Quantum-Well MOSFETs

2013

IEEE International Electron Devies Meeting

E-mode Planar Lg 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT 0.8 nm) Composite Insulator

2012