논문 | 김경록 교수 연구실 | 울산과학기술원 전기전자공학과

김경록 교수 연구실

서비스 플랜

연구실 검색

프로젝트 공고

정부 과제 추천

AI 기반 기업 서칭

홈

기본 정보

연구 분야

프로젝트

논문

구성원

논문

연구 성과 추이

표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.

5개년 연도별 논문 게재 수

10총합

5개년 연도별 피인용 수

278총합

주요 논문

*2026년 기준 최근 6년 이내 논문에 한해 Impact Factor가 표기됩니다.

article

gold

인용수 0

2025

Ternary CMOS Compact Model for Low Power On-Chip Memory Applications

Young-Eun Choi, Woo‐Seok Kim, Myoung Kim, Junyoung Park, Min Woo Ryu, Kyung Rok Kim

IEEE Journal of the Electron Devices Society

In this work, we present a tunneling based ternary CMOS (T-CMOS) compact model for low power ternary-SRAM (T-SRAM) design using CMOS technology. By designing compact model parameters of band-to-band tunneling current (IBTBT) according to effective doping concentration of T-CMOS, more accurate current model has been obtained in comparison with the conventional IBTBT models. In addition, parasitic capacitance models are obtained for transient operation. Comparing model and experimental data, it enables the prediction of T-CMOS performance under various VDD conditions. The model is validated to be more suitable for T-CMOS with low power on-chip memory applications.

https://doi.org/10.1109/jeds.2025.3588398

CMOS

Ternary operation

Chip

Power (physics)

Computer science

Electronic engineering

Electrical engineering

Engineering

Physics

Telecommunications

article

인용수 0

2024

High-Performance and Low-Noise Trantenna Sub-THz Imager With Low-Impedance Analog Buffers and Reset Switch

Sang Hyo Ahn, Min Jae Kim, Myoung Kim, Yoo Bin Song, Min Woo Ryu, Kyung Rok Kim

IF 3.2 (2024)

IEEE Transactions on Electron Devices

We demonstrate a high-performance and low-noise single-chip sub-terahertz (THz) imager array by integrating ground (gnd)-out trantenna (transistor-antenna) with a reset switch, analog buffer, multiplexer, and preamplifier using 65-nm CMOS technology. The channel charge asymmetry of sub-THz pixel device is enhanced with ac-gnd and ac-open load impedance design for gnd-out and gnd-in trantenna, respectively. The reset modulation switch suppresses output overshoot. Thus, the detector delay time of gnd-out trantenna, with a considerably smaller output junction capacitance than gnd-in trantenna, is reduced to sub-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

μ

</tex-math></inline-formula>s regime. In 0.1-THz direct illumination setup, the gnd-out trantenna with analog buffer circuitry experimentally achieves high-speed sub-THz imager operation up to 600 kHz with a commercial-level delay time <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

= 0.98 μ

</tex-math></inline-formula>s (15 times faster than gnd-in case). Owing to low-impedance analog buffer design for gnd-out trantenna with high-speed reset switch modulation (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

\sim 300

</tex-math></inline-formula> kHz), a high responsivity (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

R_{V} = 620

</tex-math></inline-formula> kV/W) and ultralow noise-equivalent power (NEP <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

= 8.44

</tex-math></inline-formula> pW/Hz0.5) are obtained for the peripheral circuitry-integrated sub-THz imager.

http://dx.doi.org/10.1109/ted.2024.3414380

Reset (finance)

Noise (video)

Electrical impedance

Terahertz radiation

Analogue switch

Optoelectronics

Materials science

Electrical engineering

Electronic engineering

Computer science

article

hybrid

인용수 4

2023

ATP1A1/BCL2L1 predicts the response of myelomonocytic and monocytic acute myeloid leukemia to cardiac glycosides

Claudia Cerella, Sruthi Reddy Gajulapalli, Anne Lorant, Déborah Gérard, Florian L. Müller, Yejin Lee, Kyung Rok Kim, Byung Woo Han, Christo Christov, Christian Récher, Jean‐Emmanuel Sarry, Mario Dicato, Marc Diederich

IF 12.8 (2023)

Leukemia

Myelomonocytic and monocytic acute myeloid leukemia (AML) subtypes are intrinsically resistant to venetoclax-based regimens. Identifying targetable vulnerabilities would limit resistance and relapse. We previously documented the synergism of venetoclax and cardiac glycoside (CG) combination in AML. Despite preclinical evidence, the repurposing of cardiac glycosides (CGs) in cancer therapy remained unsuccessful due to a lack of predictive biomarkers. We report that the ex vivo response of AML patient blasts and the in vitro sensitivity of established cell lines to the hemi-synthetic CG UNBS1450 correlates with the ATPase Na+/K+ transporting subunit alpha 1 (ATP1A1)/BCL2 like 1 (BCL2L1) expression ratio. Publicly available AML datasets identify myelomonocytic/monocytic differentiation as the most robust prognostic feature, along with core-binding factor subunit beta (CBFB), lysine methyltransferase 2A (KMT2A) rearrangements, and missense Fms-related receptor tyrosine kinase 3 (FLT3) mutations. Mechanistically, BCL2L1 protects from cell death commitment induced by the CG-mediated stepwise triggering of ionic perturbation, protein synthesis inhibition, and MCL1 downregulation. In vivo, CGs showed an overall tolerable profile while impacting tumor growth with an effect ranging from tumor growth inhibition to regression. These findings suggest a predictive marker for CG repurposing in specific AML subtypes.

https://doi.org/10.1038/s41375-023-02076-8

Myeloid leukemia

Acute myelomonocytic leukemia

Myeloid

Medicine

Monocytic leukemia

Leukemia

Immunology

Internal medicine

Cancer research

전체 논문

135

article

gold

인용수 0

2025

Ternary CMOS Compact Model for Low Power On-Chip Memory Applications

Young-Eun Choi, Woo‐Seok Kim, Myoung Kim, Junyoung Park, Min Woo Ryu, Kyung Rok Kim

IEEE Journal of the Electron Devices Society

https://doi.org/10.1109/jeds.2025.3588398

CMOS

Ternary operation

Chip

Power (physics)

Computer science

Electronic engineering

Electrical engineering

Engineering

Physics

Telecommunications

article

인용수 0

2024

High-Performance and Low-Noise Trantenna Sub-THz Imager With Low-Impedance Analog Buffers and Reset Switch

Sang Hyo Ahn, Min Jae Kim, Myoung Kim, Yoo Bin Song, Min Woo Ryu, Kyung Rok Kim

IF 3.2 (2024)

IEEE Transactions on Electron Devices

μ

= 0.98 μ

\sim 300

</tex-math></inline-formula> kHz), a high responsivity (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

R_{V} = 620

= 8.44

</tex-math></inline-formula> pW/Hz0.5) are obtained for the peripheral circuitry-integrated sub-THz imager.

http://dx.doi.org/10.1109/ted.2024.3414380

Reset (finance)

Noise (video)

Electrical impedance

Terahertz radiation

Analogue switch

Optoelectronics

Materials science

Electrical engineering

Electronic engineering

Computer science

article

hybrid

인용수 4

2023

ATP1A1/BCL2L1 predicts the response of myelomonocytic and monocytic acute myeloid leukemia to cardiac glycosides

IF 12.8 (2023)

Leukemia

https://doi.org/10.1038/s41375-023-02076-8

Myeloid leukemia

Acute myelomonocytic leukemia

Myeloid

Medicine

Monocytic leukemia

Leukemia

Immunology

Internal medicine

Cancer research

article

인용수 2

2025

Ultra-low power and 1.5 bit/cell ternary-SRAM stability modeling for always-on applications

Young-Eun Choi, Wooseok Kim, Myoung Kim, Min Woo Ryu, Kyung Rok Kim

IEICE Electronics Express

We present an ultra-low power ternary SRAM (T-SRAM) with a storage capacity of 1.5 bit/cell, using a commercial 110-nm CMOS foundry for always-on applications, along with an analysis of its stability. By designing T-CMOS with SPICE compact model parameters, which are body-effect coefficient (m), peak electric field coefficient (CEP), and gate width (W), band-to band tunneling current (IBTBT) can be reduced to hundreds of fA range and it allows VDD to scale down to 0.55 V. Finally, we experimentally demonstrate T-SRAM cell which static and dynamic powers are decreased to 4.5 × 10-2 and 1.3 × 10-7, respectively.

https://doi.org/10.1587/elex.22.20250042

Static random-access memory

Ternary operation

Stability (learning theory)

Power (physics)

Bit (key)

Ultra low power

Computer science

Electronic engineering

Computer hardware

Engineering

article

인용수 1

2024

A 28-nm 323 TOPS/mm²/b and 2007 TOPS/W/b Ternary Latch Based Sparsity-Aware CIM Macro With Double-Sampling Ternary ADC

Myoung Kim, Hoichang Jeong, Wooseok Kim, Yun‐Mi Jeong, Young-Eun Choi, Junyoung Park, Min Woo Ryu, Yong Kyu Lee, Kyuho Lee, Kyung Rok Kim

For resource constrained on-device Al environment, system efficiency is the key factor for successful implementation (Fig. 1): area efficiency (TOPS

/ mm^{2}

) to inference the user demand AI task while maintaining device size to a palm-scale, and power efficiency (TOPS/W) for maximum application usage on limited battery life. To save resources, network precisions are quantized and sparsity exploitable ternary

(- 1, 0, + 1)

input/weight shows best outcome as hardware demonstration in [1] achieves -82% energy per inference compared to binary (

- 1, + 1

). For system architecture, analog designs generally have high efficiency, as custom bitcells are compactly integrated and perform multiply-and-accumulate (MAC) operations in parallel with low energy consumption. However, there are two challenges that degrade the efficiency enhancement. 1) For bitcells, it requires an additional latch for ternary weight and reduces macro area efficiency. 2) In analog compute-in-memory (CIM), increase in number of MAC worsens the energy and signal margin which affects operation’s accuracy and efficiency. Furthermore, A-to-D converters (ADCs) occupy 41% of macro area [2] and 72% latency [3], so minimal overhead is crucial for analog CIM system efficiency. In this paper we present highly resource efficient ternary latch based CIM macro 1) The refined single latch ternary input/weight cell enabled by 28 nm ternary-CMOS (T-CMOS) technology. 2) Solutions for analog CIM performance enhancement by energy-efficient and signal margin improved MAC operation with double-sampling ternary ADC.

https://doi.org/10.1109/a-sscc60305.2024.10848571

TOPS

Ternary operation

Macro

Sampling (signal processing)

Materials science

Computer science

Physics

Optics

Detector

Programming language

article

인용수 3

2023

Energy Efficient Ternary Device in 28-nm CMOS Technology with Excellent Short-Channel Effect Immunity and Variation Tolerance Characteristics

Woo-Seok Kim, Young-Eun Choi, Myoung Kim, Min Woo Ryu, Kyung Rok Kim

Since the semiconductor industry has entered the hyper-scaling era, which requires a technology to itself appropriately to meet the demands of data-intensive computing, binary Boltzmann transistor is facing the integration density limits [1]. One efficient approach to overcome this challenge is the ternary system, where system complexity can be reduced to 63.1% of binary one [2]. Recently, various research efforts of ternary devices have been proposed [3]–[5]. However, these studies have not verified its ternary function under wafer-scale measurements yet. We have reported a wafer-level integrated and power-scalable ternary device technology (T-CMOS) [6]. In this work, we demonstrate a short-channel effect immune and variation tolerant ternary device using 28-nm CMOS foundry.

https://doi.org/10.1109/drc58590.2023.10187007

Ternary operation

CMOS

Transistor

Computer science

Scalability

Channel (broadcasting)

Materials science

Electronic engineering

Optoelectronics

Electrical engineering

article

인용수 0

2023

Highly Sensitive Plasmonic Terahertz Detector with Integrated Sub-Wavelength Aperture Based on Asymmetric FET in 65-nm CMOS Technology

Min Jae Kim, Sang Hyo Ahn, Yoo Bin Song, Min Woo Ryu, Kyung Rok Kim

We have analyzed the effect of structural asymmetry and aperture position for field-effect transistor (FET)-based plasmonic terahertz (THz) detector with integrated aperture by using 65-nm CMOS process. By applying structural asymmetry between the source and drain in FET, we obtained 9.3 mV (7-fold) photoresponse <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">

(Δ u)

</tex> in comparison to symmetric FET for aperture positioned at gate. In addition, by asymmetry in feeding the incoming THz wave with aperture positioned at drain, we have experimentally demonstrated highly enhanced detection performance followed by 18.5 mV (2-fold) <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">

Δ u

</tex> in comparison to aperture positioned at gate.

https://doi.org/10.1109/nano58406.2023.10231290

Terahertz radiation

CMOS

Aperture (computer memory)

Detector

Plasmon

Optoelectronics

Asymmetry

Field-effect transistor

Physics

Transistor

article

인용수 2

2023

Low Power and High Density Ternary-SRAM for Always-on Applications

Young-Eun Choi, Woo‐Seok Kim, Myoung Kim, Min Woo Ryu, Kyung Rok Kim

Low power consumption is one of the critical design constraints in always-on sensing applications such as wearable, mobile, and edge devices [1]. To accomplish low power design, ternary devices have been investigated, which can reduce system complexity to 63.1 % from binary one [2], [3]. However, ternary memory has yet to be realized because of the lack of proper ternary device technology which has reproducibility, CMOS-compatibility, or low leakage power since most of the ternary devices are based on a multi-threshold scheme [4]–[7].

https://doi.org/10.1109/drc58590.2023.10187035

Ternary operation

CMOS

Static random-access memory

Power consumption

Computer science

Enhanced Data Rates for GSM Evolution

Power (physics)

Electronic engineering

Engineering

Computer hardware

article

인용수 11

2021

Theoretical Evaluation of Two-Dimensional Ferroelectric Material CuInP₂S₆ for Ferroelectric Tunnel Junction Device

Eunyeong Yang, Kyung Rok Kim, Jiwon Chang

IF 4.816 (2021)

IEEE Electron Device Letters

Ferroelectric tunnel junction (FTJ) exploiting the switchable polarization of ferroelectric material holds great potential for the low-power non-volatile memory. Recently, two-dimensional (2D) ferroelectric material CuInP 2 S 6 (CIPS) which can provide ferroelectricity at the ultimate atomic-scale has been successfully introduced in FTJ to achieve significantly improved TER. Here, we present a theoretical study on the performance of FTJ based on CIPS through the quantum transport simulation using <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">kp Hamiltonian obtained from density functional theory. Benchmarking with ferroelectric HfZrO 2 -based FTJ reveals that much higher TER can be achieved in CIPS-based FTJ due to a lower tunneling potential barrier and a larger tunneling effective mass.

https://doi.org/10.1109/led.2021.3103518

Ferroelectricity

Quantum tunnelling

Tunnel junction

Materials science

Tunnel magnetoresistance

Physics

Condensed matter physics

Optoelectronics

Ferromagnetism

Dielectric

article

인용수 9

2021

Performance Enhancement of Silicon-Based Sub-Terahertz Detector by Highly Localized Plasmonic Wave in Nano-Ring FET

Esan Jang, Min Woo Ryu, Ramesh Patel, Sang Hyo Ahn, Ki Jin Han, Kyung Rok Kim

IF 4.816 (2021)

IEEE Electron Device Letters

A compact monolithic trantenna ( <underline xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tran sistor-an <underline xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tenna ) device is presented for a high-performance sub-THz wave detector using 28-nm CMOS foundry process. Based on a highly localized plasmonic wave in a silicon nano-ring field-effect transistor (FET), we obtained a total 535-fold photoresponse ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

Δ u

</tex-math></inline-formula> ) enhancement in an on-chip measurement as compared with our previous works using the same asymmetry ratio ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

η_{a} = 30

</tex-math></inline-formula> ). The inner contact diameter ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

d_{in}

</tex-math></inline-formula> ) was scaled down from 8 to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

0.13 μ m

</tex-math></inline-formula> for the parasitic resistance limit case. By changing the ground source from inside to outside the nano-ring FET, we could generate different <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

Δ u

</tex-math></inline-formula> polarities, which in turn reduced the junction leakage with improved <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

∣Δ u ∣

</tex-math></inline-formula> . From a fabricated nano-ring FET with the outer ring grounded source, we observed <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

5 \times

</tex-math></inline-formula> of additional <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

∣Δ u ∣

</tex-math></inline-formula> enhancement followed by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

107 \times

</tex-math></inline-formula> with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

d_{in}

</tex-math></inline-formula> scaling. In addition, based on the highly localized plasmonic wave nano-ring FET without any external gain, a record-high free-space responsivity of 12.4 kV/W and a reduced noise equivalent power of 1 pW/Hz <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

^{0.5}

</tex-math></inline-formula> were experimentally demonstrated under 0.12-THz radiation.

https://doi.org/10.1109/led.2021.3119926

Detector

Physics

Particle physics

Optoelectronics

Optics

프로젝트 공고 서비스 문의 자주 묻는 질문 이용약관 개인정보처리방침

주식회사 디써클

대표 장재우,이윤구서울특별시 강남구 역삼로 169, 명우빌딩 2층 (TIPS타운 S2)대표 전화 0507-1312-6417이메일 info@rndcircle.io사업자등록번호 458-87-03380호스팅제공자 구글 클라우드 플랫폼(GCP)

주요 논문

*2026년 기준 최근 6년 이내 논문에 한해 Impact Factor가 표기됩니다.

article

gold

인용수 0

2025

Ternary CMOS Compact Model for Low Power On-Chip Memory Applications

Young-Eun Choi, Woo‐Seok Kim, Myoung Kim, Junyoung Park, Min Woo Ryu, Kyung Rok Kim

IEEE Journal of the Electron Devices Society

https://doi.org/10.1109/jeds.2025.3588398

CMOS

Ternary operation

Chip

Power (physics)

Computer science

Electronic engineering

Electrical engineering

Engineering

Physics

Telecommunications

article

인용수 0

2024

High-Performance and Low-Noise Trantenna Sub-THz Imager With Low-Impedance Analog Buffers and Reset Switch

Sang Hyo Ahn, Min Jae Kim, Myoung Kim, Yoo Bin Song, Min Woo Ryu, Kyung Rok Kim

IF 3.2 (2024)

IEEE Transactions on Electron Devices

μ

= 0.98 μ

\sim 300

</tex-math></inline-formula> kHz), a high responsivity (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

R_{V} = 620

= 8.44

</tex-math></inline-formula> pW/Hz0.5) are obtained for the peripheral circuitry-integrated sub-THz imager.

http://dx.doi.org/10.1109/ted.2024.3414380

Reset (finance)

Noise (video)

Electrical impedance

Terahertz radiation

Analogue switch

Optoelectronics

Materials science

Electrical engineering

Electronic engineering

Computer science

article

hybrid

인용수 4

2023

ATP1A1/BCL2L1 predicts the response of myelomonocytic and monocytic acute myeloid leukemia to cardiac glycosides

IF 12.8 (2023)

Leukemia

https://doi.org/10.1038/s41375-023-02076-8

Myeloid leukemia

Acute myelomonocytic leukemia

Myeloid

Medicine

Monocytic leukemia

Leukemia

Immunology

Internal medicine

Cancer research

전체 논문

135

article

gold

인용수 0

2025

Ternary CMOS Compact Model for Low Power On-Chip Memory Applications

Young-Eun Choi, Woo‐Seok Kim, Myoung Kim, Junyoung Park, Min Woo Ryu, Kyung Rok Kim

IEEE Journal of the Electron Devices Society

https://doi.org/10.1109/jeds.2025.3588398

CMOS

Ternary operation

Chip

Power (physics)

Computer science

Electronic engineering

Electrical engineering

Engineering

Physics

Telecommunications

article

인용수 0

2024

High-Performance and Low-Noise Trantenna Sub-THz Imager With Low-Impedance Analog Buffers and Reset Switch

Sang Hyo Ahn, Min Jae Kim, Myoung Kim, Yoo Bin Song, Min Woo Ryu, Kyung Rok Kim

IF 3.2 (2024)

IEEE Transactions on Electron Devices

μ

= 0.98 μ

\sim 300

</tex-math></inline-formula> kHz), a high responsivity (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

R_{V} = 620

= 8.44

</tex-math></inline-formula> pW/Hz0.5) are obtained for the peripheral circuitry-integrated sub-THz imager.

http://dx.doi.org/10.1109/ted.2024.3414380

Reset (finance)

Noise (video)

Electrical impedance

Terahertz radiation

Analogue switch

Optoelectronics

Materials science

Electrical engineering

Electronic engineering

Computer science

article

hybrid

인용수 4

2023

ATP1A1/BCL2L1 predicts the response of myelomonocytic and monocytic acute myeloid leukemia to cardiac glycosides

IF 12.8 (2023)

Leukemia

https://doi.org/10.1038/s41375-023-02076-8

Myeloid leukemia

Acute myelomonocytic leukemia

Myeloid

Medicine

Monocytic leukemia

Leukemia

Immunology

Internal medicine

Cancer research

article

인용수 2

2025

Ultra-low power and 1.5 bit/cell ternary-SRAM stability modeling for always-on applications

Young-Eun Choi, Wooseok Kim, Myoung Kim, Min Woo Ryu, Kyung Rok Kim

IEICE Electronics Express

https://doi.org/10.1587/elex.22.20250042

Static random-access memory

Ternary operation

Stability (learning theory)

Power (physics)

Bit (key)

Ultra low power

Computer science

Electronic engineering

Computer hardware

Engineering

article

인용수 1

2024

A 28-nm 323 TOPS/mm²/b and 2007 TOPS/W/b Ternary Latch Based Sparsity-Aware CIM Macro With Double-Sampling Ternary ADC

Myoung Kim, Hoichang Jeong, Wooseok Kim, Yun‐Mi Jeong, Young-Eun Choi, Junyoung Park, Min Woo Ryu, Yong Kyu Lee, Kyuho Lee, Kyung Rok Kim

For resource constrained on-device Al environment, system efficiency is the key factor for successful implementation (Fig. 1): area efficiency (TOPS

/ mm^{2}

(- 1, 0, + 1)

input/weight shows best outcome as hardware demonstration in [1] achieves -82% energy per inference compared to binary (

- 1, + 1

https://doi.org/10.1109/a-sscc60305.2024.10848571

TOPS

Ternary operation

Macro

Sampling (signal processing)

Materials science

Computer science

Physics

Optics

Detector

Programming language

article

인용수 3

2023

Energy Efficient Ternary Device in 28-nm CMOS Technology with Excellent Short-Channel Effect Immunity and Variation Tolerance Characteristics

Woo-Seok Kim, Young-Eun Choi, Myoung Kim, Min Woo Ryu, Kyung Rok Kim

https://doi.org/10.1109/drc58590.2023.10187007

Ternary operation

CMOS

Transistor

Computer science

Scalability

Channel (broadcasting)

Materials science

Electronic engineering

Optoelectronics

Electrical engineering

article

인용수 0

2023

Highly Sensitive Plasmonic Terahertz Detector with Integrated Sub-Wavelength Aperture Based on Asymmetric FET in 65-nm CMOS Technology

Min Jae Kim, Sang Hyo Ahn, Yoo Bin Song, Min Woo Ryu, Kyung Rok Kim

(Δ u)

Δ u

</tex> in comparison to aperture positioned at gate.

https://doi.org/10.1109/nano58406.2023.10231290

Terahertz radiation

CMOS

Aperture (computer memory)

Detector

Plasmon

Optoelectronics

Asymmetry

Field-effect transistor

Physics

Transistor

article

인용수 2

2023

Low Power and High Density Ternary-SRAM for Always-on Applications

Young-Eun Choi, Woo‐Seok Kim, Myoung Kim, Min Woo Ryu, Kyung Rok Kim

https://doi.org/10.1109/drc58590.2023.10187035

Ternary operation

CMOS

Static random-access memory

Power consumption

Computer science

Enhanced Data Rates for GSM Evolution

Power (physics)

Electronic engineering

Engineering

Computer hardware

article

인용수 11

2021

Theoretical Evaluation of Two-Dimensional Ferroelectric Material CuInP₂S₆ for Ferroelectric Tunnel Junction Device

Eunyeong Yang, Kyung Rok Kim, Jiwon Chang

IF 4.816 (2021)

IEEE Electron Device Letters

https://doi.org/10.1109/led.2021.3103518

Ferroelectricity

Quantum tunnelling

Tunnel junction

Materials science

Tunnel magnetoresistance

Physics

Condensed matter physics

Optoelectronics

Ferromagnetism

Dielectric

article

인용수 9

2021

Performance Enhancement of Silicon-Based Sub-Terahertz Detector by Highly Localized Plasmonic Wave in Nano-Ring FET

Esan Jang, Min Woo Ryu, Ramesh Patel, Sang Hyo Ahn, Ki Jin Han, Kyung Rok Kim

IF 4.816 (2021)

IEEE Electron Device Letters

Δ u

η_{a} = 30

</tex-math></inline-formula> ). The inner contact diameter ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

d_{in}

</tex-math></inline-formula> ) was scaled down from 8 to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

0.13 μ m

Δ u

∣Δ u ∣

5 \times

</tex-math></inline-formula> of additional <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

∣Δ u ∣

</tex-math></inline-formula> enhancement followed by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

107 \times

</tex-math></inline-formula> with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">

d_{in}

^{0.5}

</tex-math></inline-formula> were experimentally demonstrated under 0.12-THz radiation.

https://doi.org/10.1109/led.2021.3119926

Detector

Physics

Particle physics

Optoelectronics

Optics