발행물
컨퍼런스
25th Korean Conference on Semiconductors
2018.02
,
Vertical Tunnel Field-Effect Transistor with Polysilicon Channel,
Self-Rectifying Resistive Random-Access Memory with a-Si/Si3N4 Bilayer
Vertical Tunnel Field-Effect Transistor with Polysilicon Channel
International Conference on Electronics, Information and Communication (ICEIC)
2018
Analysis of NLSB Effect depending on Cell Pattern and Bias Conditions in 3D NAND Flash Memory,
Analysis of STDP Characteristics of 3D Floating-Gate Synapse Device for Neuromorphic Applications,