Gil Sung Lee, Jung Hoon Lee, Il Han Park, Seongjae Cho, Jang-Gn Yun, D Li, Doo Hyun Kim, Yoon Kim, Se Hwan Park, Won‐Bo Shim, Wan Dong Kim, Jong Duk Lee, Hyungcheol Shin, Byung‐Gook Park
IEEE Electron Device Letters, 2009
2142
A Gated Twin-Bit (GTB) Nonvolatile Memory Device and Its Fabrication Method
Seongjae Cho, Il Han Park, Yoon Kim, Se Hwan Park, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park
IEEE Transactions on Nanotechnology, 2009
2143
Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning
Jang-Gn Yun, Yoon Kim, Il Han Park, Jung Hoon Lee, Daewoong Kang, Myoungrack Lee, Hyungcheol Shin, Jong Duk Lee, Byung‐Gook Park
IEEE Transactions on Electron Devices, 2009
2144
3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array
김윤, 이길성, 박일한, 박병국, 신형철, 조성재, 이종덕
IEICE TRANSACTIONS ON ELECTRONICS, 2009
2145
A 2-Bit Recessed Channel Nonvolatile Memory Device With a Lifted Charge-Trapping Node
김윤, 박병국, 김두현, 조성재, 이정훈, 이종덕, 윤장근, 이길성, 박일한
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2009
2146
Effects of equivalent oxide thickness on bandgap-engineered SONOS flash memory
Dong Hua Li, Il Han Park, Seongjae Cho, Jang-Gn Yun, Jung H. Lee, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Se Hwan Park, Won‐Bo Shim, Wandong Kim, Byung‐Gook Park
2009
2147
Field application and numerical analysis of Suction Vertical Drain Method
Kim Soo Sam, Ahn Dong Wook, Kim Ki Nyun, Kwang Seok Yoon, Han Sang Jae, Yoon Kim
IOS Press eBooks, 2009
2148
Multi-level reading method by using PCI (Paired Cell Interference) in vertical NAND flash memory
Yoon Kim, Seongjae Cho, Jang-Gn Yun, Il Han Park, Gil Sung Lee, D. Kim, Dong Hua Li, Se Hwan Park, Wandong Kim, Won‐Bo Shim, Byung‐Gook Park
SIAM International Conference on Data Mining, 2009
2149
A Post-processing for the reduction of blocking artifact in mobile devices
Dae-Hyun Park, Hyunhee Park, Yoon Kim
ICCES: International Conference on Computational & Experimental Engineering and Sciences, 2009
2150
Dependence of program and erase speed on bias conditions for fully depleted channel of vertical NAND flash memory devices
Seongjae Cho, Yoon Kim, Jang-Gn Yun, Jung Hoon Lee, Won‐Bo Shim, Byung‐Gook Park