3D NAND Flash Memory에서 Tapering된 O/N/O 및 O/N/F 구조의 Threshold Voltage 변화 분석
강명곤, 이지환, 이재우
전기전자학회논문지, 2024
322
Optimization of Read Operation for Low Power Consumption in 3d Nand Flash Memory
Jesun Park, seongwoo Kim, Taeyoung Cho, Myounggon Kang
SSRN Electronic Journal, 2024
323
Physics-Based SPICE-Compatible Compact Model of FLASH Memory With Poly-Si Channel for Computing-in-Memory Applications
Jung Rae Cho, Donghyun Ryu, Donguk Kim, Wonjung Kim, Yeonwoo Kim, Changwook Kim, Yoon Kim, Myounggon Kang, Jiyong Woo, Dae Hwan Kim
IEEE Journal of the Electron Devices Society, 2024
324
Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing
Muhammad Ismail, Sunghun Kim, Maria Rasheed, Chandreswar Mahata, Myounggon Kang, Sungjun Kim
Journal of Alloys and Compounds, 2024
325
Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings
Taeyoung Cho, Sungyeop Jung, Myounggon Kang
Electronics, 2024
326
Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices
Sangki Cho, Sueyeon Kim, Myounggon Kang, Seung-Jae Baik, Jongwook Jeon
Micromachines, 2024
327
An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications
Seonjun Choi, Myounggon Kang, Hong-sik Jung, Yuri Kim, Yun‐Heub Song
Electronics, 2024
328
Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning
Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock‐Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim
IEEE Access, 2024
329
The Optimization of Program Operation for Low Power Consumption in 3D Ferroelectric (Fe)-NAND Flash Memory
Myeongsang Yun, Gyuhyeon Lee, Gyunseok Ryu, Hyoungsoo Kim, Myounggon Kang
Electronics, 2024
330
An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications
Seonjun Choi, Jin‐Seong Park, Myounggon Kang, Hong-sik Jung, Yun‐Heub Song