Review: CO2 capturing methods of the last two decades
S. Kammerer, I. Borho, Jeil Jung, Magnus S. Schmidt
International Journal of Environmental Science and Technology, 2022
752
Spin-orbit coupling-enhanced valley ordering of malleable bands in twisted bilayer graphene on WSe2
Saisab Bhowmik, Bhaskar Ghawri, Youngju Park, Dongkyu Lee, Suvronil Datta, Radhika Soni, K. Watanabe, T. Taniguchi, Arindam Ghosh, Jeil Jung, U. Chandni
arXiv (Cornell University), 2022
753
Decay time dynamics of red and blue luminescence of surface-functionalized silicon quantum dots
Beom Soo Joo, Minseon Gu, Jeehwan Han, Namsik Jung, Seungchul Kim, Dong‐Wook Park, Moonsup Han
Journal of Luminescence, 2021
754
Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate
Je-Hyuk Kim, Youngjin Seo, Jun Tae Jang, Shinyoung Park, Dongyeon Kang, Jaewon Park, Moonsup Han, Changwook Kim, Dong‐Wook Park, Dae Hwan Kim
Applied Sciences, 2021
755
A multivariate approach to determine electron beam parameters for a Monte Carlo 6 MV Linac model: Statistical and machine learning methods
Hye Jeong Yang, Tae Hoon Kim, Thomas Schaarschmidt, Dong‐Wook Park, Seung Hee Kang, Hyun‐Tai Chung, Tae Suk Suh
Physica Medica, 2021
756
On-chip adaptive matching learning with charge-trap synapse device and ReLU activation circuit
Ji‐Hoon Ahn, Hyun-Seok Choi, Jung Nam Kim, Byung‐Gook Park, Sungjun Kim, Jaehong Lee, Yoon Kim
Solid-State Electronics, 2021
757
Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system
Osung Kwon, Yoon Kim, Myounggon Kang, Sungjun Kim
Applied Surface Science, 2021
758
Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications
Umbreen Rasheed, Hojeong Ryu, Chandreswar Mahata, R.M. Arif Khalil, Muhammad Imran, Anwar Manzoor Rana, Farhana Kousar, Boram Kim, Yoon Kim, Seongjae Cho, Fayyaz Hussain, Sungjun Kim
Journal of Alloys and Compounds, 2021
759
Impact Ionization and Hot-Carrier Degradation in Saddle-Fin and Buried-Gate Transistor of Dynamic Random Access Memory at Cryogenic Temperature
Jun Park, Namhyun Lee, Gang-Jun Kim, Hyun-Seok Choi, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim
IEEE Electron Device Letters, 2021
760
Analysis of threshold voltage shift for full v<inf>gs</inf> /v<inf>ds</inf> /oxygen-content span under positive bias stress in bottom-gate amorphous ingazno thin-film transistors