발행물

전체 논문

2601

851

A Novel Program Operation Scheme With Negative Bias in 3-D NAND Flash Memory
Jae-Min Sim, Myounggon Kang, Yun‐Heub Song
IEEE Transactions on Electron Devices, 2021

852

Short-term and long-term synaptic plasticity in Ag/HfO2/SiO2/Si stack by controlling conducting filament strength
Yewon Lee, Chandreswar Mahata, Myounggon Kang, Sungjun Kim
Applied Surface Science, 2021

853

Pulse frequency dependent synaptic characteristics in Ta/SiN/Si memristor device for neuromorphic system
Minsu Park, Myounggon Kang, Sungjun Kim
Journal of Alloys and Compounds, 2021

854

Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system
Osung Kwon, Yoon Kim, Myounggon Kang, Sungjun Kim
Applied Surface Science, 2021

855

Gradual conductance modulation of Ti/WO<i>x</i>/Pt memristor with self-rectification for a neuromorphic system
Jiwoong Shin, Myounggon Kang, Sungjun Kim
Applied Physics Letters, 2021

856

Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure
Seonjun Choi, Changhwan Choi, Jae Kyeong Jeong, Myounggon Kang, Yun‐Heub Song
Electronics, 2021

857

Impact Ionization and Hot-Carrier Degradation in Saddle-Fin and Buried-Gate Transistor of Dynamic Random Access Memory at Cryogenic Temperature
Jun Park, Namhyun Lee, Gang-Jun Kim, Hyun-Seok Choi, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim
IEEE Electron Device Letters, 2021

858

The Analysis of SEU in Nanowire FETs and Nanosheet FETs
Yun-Jae Kim, Myounggon Kang
Electronics, 2021

859

TID Circuit Simulation in Nanowire FETs and Nanosheet FETs
Jongwon Lee, Myounggon Kang
Electronics, 2021

860

Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
Hyeonjae Won, Myounggon Kang
Applied Sciences, 2021