Direct Photolithography In their Research Article (10.1002/adfm.202520047), Jaehoon Lim, Do-Hoon Hwang, Jeongkyun Roh, and co-workers present a universal and nondestructive direct photolithography method that enables high-resolution quantum dot (QD) patterning without ligand exchange. By blending QDs with a photocrosslinkable polymer, this approach preserves optical properties while enhancing QD-LED efficiency and operational lifetime, paving the way for next-generation display technologies.

Colloidal Quantum Dot Light-Emitting Diodes Colloidal quantum dots light-emitting diodes (QLEDs) have attracted tremendous attention for display applications. To guide the pathway towards successful commercialization, Changhee Lee and co-workers review representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication methods. More details can be found in article number 2212220.

Direct Photolithography In their Research Article (10.1002/adfm.202520047), Jaehoon Lim, Do-Hoon Hwang, Jeongkyun Roh, and co-workers present a universal and nondestructive direct photolithography method that enables high-resolution quantum dot (QD) patterning without ligand exchange. By blending QDs with a photocrosslinkable polymer, this approach preserves optical properties while enhancing QD-LED efficiency and operational lifetime, paving the way for next-generation display technologies.

Colloidal Quantum Dot Light-Emitting Diodes Colloidal quantum dots light-emitting diodes (QLEDs) have attracted tremendous attention for display applications. To guide the pathway towards successful commercialization, Changhee Lee and co-workers review representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication methods. More details can be found in article number 2212220.

Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.

To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs) suitable for commercialization, maintaining charge neutrality within the QD emissive layer is essential to suppress nonradiative Auger recombination. However, in conventional QD-LEDs, the electron injection rate often exceeds that of the holes, leading to charge imbalance and Auger recombination. This study aims to address the aforementioned issue by introducing a charge-generation p–n junction (CGJ) to facilitate efficient hole injection in InP-based QD-LEDs. The incorporation of the CGJ enables work-function-independent charge carrier injection, significantly enhancing the hole injection rate. Single-carrier device measurements and capacitance–voltage analysis confirm that the CGJ improves the hole injection efficiency and significantly increases the hole current. Consequently, devices incorporating the CGJ exhibit a two-fold improvement in both maximum luminance (from 11,080 to 22,692 cd m–2) and external quantum efficiency (from 5.33 to 11.01%) compared to devices without the CGJ. Furthermore, the CGJ-based QD-LEDs demonstrate an order-of-magnitude enhancement in the operational lifetime, highlighting that a robust charge balance is achieved. These findings demonstrate the effectiveness of the CGJ as a powerful tool for improving the performance and stability of InP-based QD-LEDs, thereby advancing their potential for widespread adoption in next-generation optoelectronic devices.

A novel T-type specimen enabled the separation of the thermal and athermal contributions of electropulsing treatment (EPT) in pre-twinned AZ31 Mg alloy. The combination of T-type geometry and carefully selected EPT conditions equalized the thermal contributions at two distinct locations (J70-C and J77-D) in a thermally stable regime, which isolated the athermal effect in J70-C. The results were verified using finite element analysis. Although the athermal EPT contribution did not alter the fundamental microstructural evolution mechanisms, the evolution rate increased significantly. As a result, the J70-C region exhibited faster grain growth, annihilation of twin boundaries, reduction of low-angle grain boundaries, dislocation annihilation, and static recrystallization compared to its counterpart, as further supported by the microhardness trends. These results were interpreted in light of the additional driving force by the athermal EPT contribution, which accelerated the strain-induced boundary migrations beyond Joule heating alone. The proposed T-type specimen methodology offers a robust framework for decoupling the thermal and athermal effects in macroscale EPT processes.

Abstract There has been considerable progress in colloidal quantum dot light‐emitting diodes (QD‐LEDs) for display applications. However, their commercialization remains challenging, because of the difficulty in achieving high‐resolution, full‐color patterning of quantum dots (QDs) without degrading their optical properties. Direct photolithography has attracted attention, but it often requires complicated ligand‐exchange processes and causes ultraviolet (UV)‐induced QD degradation. Herein, a nondestructive, universal QD patterning method that blends QDs with a photocrosslinkable hole‐transport layer (HTL) polymer, poly(9‐vinylcarbazole), is presented. Upon UV irradiation, the resulting blended films form a robust crosslinked network that encapsulates and protects the QDs, enabling high‐resolution patterning while preserving their optical properties. By employing this strategy to cadmium (Cd)‐based QDs, monochrome resolutions exceeding 10 000 pixels per inch are achieved, without requiring ligand‐exchange steps. Furthermore, incorporating this photocrosslinked blended emissive layer into QD‐LEDs enhances the device performance by suppressing excess electron injection and improving hole injection, leading to a 1.7 fold increase in the external quantum efficiency and a three fold extension of operational lifetimes. Notably, this process can be readily applied to diverse QDs, including Cd‐free variants and other functional nanocrystals, highlighting the broad applicability and commercial potential of this photocrosslinkable QD‐HTL platform for next‐generation display technologies.

The growing demand for high-performance, flexible, and low-cost photodetectors has driven research interest in heterostructure-based architectures that integrate materials with complementary optical and electronic properties. In this study, we developed a heterostructure photodetector platform based on laser-induced graphene (LIG) and lead sulfide colloidal quantum dots (QDs). LIG, which is directly patterned on polyimide <i>via</i> laser irradiation, offers scalable mask-free fabrication with mechanical flexibility and excellent conductivity. To enhance charge transfer between the QDs and LIG, solid-state ligand exchange was performed, replacing the long-chain oleic acid ligands with short iodide ligands. This modification significantly improved charge transfer efficiency, resulting in a high photo-to-dark current ratio (>100), responsivity approximately 20 A W^-1 with excellent linearity across a wide range of light intensities, and specific detectivity exceeding 10¹¹ Jones. Furthermore, the versatility of LIG formation was demonstrated through its compatibility with various polyimide substrate formats, proving its potential for fabricating flexible, large-area, and customizable electrode patterns. These findings highlight the application potential of LIG-QD heterostructures as a platform for next-generation flexible optoelectronic devices.

Manufacturing well-designed three-dimensional (3D) structures on the surface a soft elastomer is essential for achieving a highly sensitive soft pressure sensor and for pursuing advanced applications. While soft pressure sensors with 3D structures have previously been developed through methods such as prefabricated micro-pattern molds and elastomer replication, challenges such as limited geometric flexibility and the necessity for multi-step fabrication processes remain. This study demonstrates a novel approach for fabricating 3D structures by employing localized Joule heating on thermoset elastomers, aimed at enhancing the sensitivity of the soft pressure sensors. The thermal fields generated by localized Joule heating apply heat only to a designed area of the thermoset elastomer, enabling the formation of 3D structures in specific shapes. The localized Joule heating-induced 3D-structured film (LHSF) is utilized in a piezocapacitive soft pressure sensor. The sensor exhibits a high sensitivity of 1.352 kPa^-1 in the low-pressure range with a fast response time (0.59 s), excellent repeatability, and long-term stability. Finally, the advanced applicability of the proposed soft pressure sensors in diverse plans including grip pressure detection, motion monitoring, and multi-pixel pressure array pads is demonstrated.