,

MoS2/Nb2O5 Memtransister with Highly Reliable Heterosynaptic Plasticity

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Optoelectronic Synapse Device based on HfO2/InGaZnO Double-layered Structure for Brain-inspired Neuromorphic System

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Comparative analysis study on PVT-synthesized Hg2Br2 and Hg2BrxCl2-x crystals

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Highly Reliable Heterosynaptic Plasticity of Low Power MoS2/Nb2O5 Memtransistor

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Performance Enhancement of MoS2/p-Si Infrared Photodetector via the Introduction of Graphene Layer