발행물
컨퍼런스
3rd International Symposium on Anodizing Science and Technology 2019
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Low-powered Switching Characteristics of SWCNTs Transistor Integrated with Al-ZrHfO2 Dielectric for a Nonvolatile Memory
Heterojunction Photodiode Using 2D TMDs deposited by an AP-PECVD
E-MRS Spring Meeting 2019
2019.05
Effect of Post Annealing on Electrical Properties of Sol-gel based IGZO Transistor with High-k Al2O3 Gate Dielectric
Investigation on Transistor Devices Based on 2D WSe2 Synthesized by Unique Co-sputtering Method
Low-powered Memory Characteristics of SWCNTs transistor integrated with Al doped HfZrO2 dielectric