In this work, we report an n-type metal-oxide-semiconductor (nMOS) inverter using chemical vapor deposition (CVD)-grown monolayer WS₂ field-effect transistors (FETs). Our large-area CVD-grown monolayer WS₂ FETs exhibit outstanding electrical properties including a high on/off ratio, small subthreshold swing, and excellent drain-induced barrier lowering. These are achieved by n-type doping using AlO_x/Al₂O₃ and a double-gate structure employing high-<i>k</i> dielectric HfO₂. Due to the superior subthreshold characteristics, monolayer WS₂ FETs show high transconductance and high output resistance in the subthreshold regime, resulting in significantly higher intrinsic gain compared to conventional Si MOSFETs. Therefore, we successfully realize subthreshold operating monolayer WS₂ nMOS inverters with extremely high gains of 564 and 2056 at supply voltage (<i>V</i>_DD) of 1 and 2 V, respectively, and low power consumption of ∼2.3 pW·μm^-1 at <i>V</i>_DD = 1 V. In addition, the monolayer WS₂ nMOS inverter is further expanded to the demonstration of logic circuits such as AND, OR, NAND, NOR logic gates, and SRAM. These findings suggest the potential of monolayer WS₂ for high-gain and low-power logic circuits and validate the practical application in large areas.

Self-poled molybdenum disulfide embedded polyvinylidene fluoride (MoS₂@PVDF) hybrid nanocomposite films fabricated by a bar-printing process are demonstrated to improve the output performances of triboelectric nanogenerators (TENGs). Comparative analyses of MoS₂@PVDF films with different MoS₂ concentrations and the synergic effect based on postannealing at different temperatures were examined to increase the triboelectric open-circuit voltage and the short-circuit current (∼200 V and ∼11.8 μA, respectively). A further comprehensive study of the structural and electrical changes that occur on the surfaces of the proposed hybrid nanocomposite films revealed that both MoS₂ incorporation into PVDF and postannealing can individually promote the formation of the β-crystal phase and generate polarity in the PVDF. In addition, MoS₂, which provides triboelectric trap states, was found to play a significant role in improving the charge capture capacity of the nanocomposite film and increasing the potential difference between two electrodes of TENGs. The produced electrical energy of the developed wearable TENGs with excellent operational stability for a long duration was utilized to power a variety of mobile smart gadgets in addition to low-power electronic devices. We believe that this study can provide a simple and effective approach to improving the energy-harvesting capabilities of wearable TENGs based on hybrid nanocomposite films.