In this work, we report an n-type metal-oxide-semiconductor (nMOS) inverter using chemical vapor deposition (CVD)-grown monolayer WS₂ field-effect transistors (FETs). Our large-area CVD-grown monolayer WS₂ FETs exhibit outstanding electrical properties including a high on/off ratio, small subthreshold swing, and excellent drain-induced barrier lowering. These are achieved by n-type doping using AlO_x/Al₂O₃ and a double-gate structure employing high-<i>k</i> dielectric HfO₂. Due to the superior subthreshold characteristics, monolayer WS₂ FETs show high transconductance and high output resistance in the subthreshold regime, resulting in significantly higher intrinsic gain compared to conventional Si MOSFETs. Therefore, we successfully realize subthreshold operating monolayer WS₂ nMOS inverters with extremely high gains of 564 and 2056 at supply voltage (<i>V</i>_DD) of 1 and 2 V, respectively, and low power consumption of ∼2.3 pW·μm^-1 at <i>V</i>_DD = 1 V. In addition, the monolayer WS₂ nMOS inverter is further expanded to the demonstration of logic circuits such as AND, OR, NAND, NOR logic gates, and SRAM. These findings suggest the potential of monolayer WS₂ for high-gain and low-power logic circuits and validate the practical application in large areas.

In this work, we report an n-type metal-oxide-semiconductor (nMOS) inverter using chemical vapor deposition (CVD)-grown monolayer WS₂ field-effect transistors (FETs). Our large-area CVD-grown monolayer WS₂ FETs exhibit outstanding electrical properties including a high on/off ratio, small subthreshold swing, and excellent drain-induced barrier lowering. These are achieved by n-type doping using AlO_x/Al₂O₃ and a double-gate structure employing high-<i>k</i> dielectric HfO₂. Due to the superior subthreshold characteristics, monolayer WS₂ FETs show high transconductance and high output resistance in the subthreshold regime, resulting in significantly higher intrinsic gain compared to conventional Si MOSFETs. Therefore, we successfully realize subthreshold operating monolayer WS₂ nMOS inverters with extremely high gains of 564 and 2056 at supply voltage (<i>V</i>_DD) of 1 and 2 V, respectively, and low power consumption of ∼2.3 pW·μm^-1 at <i>V</i>_DD = 1 V. In addition, the monolayer WS₂ nMOS inverter is further expanded to the demonstration of logic circuits such as AND, OR, NAND, NOR logic gates, and SRAM. These findings suggest the potential of monolayer WS₂ for high-gain and low-power logic circuits and validate the practical application in large areas.

Self-poled molybdenum disulfide embedded polyvinylidene fluoride (MoS₂@PVDF) hybrid nanocomposite films fabricated by a bar-printing process are demonstrated to improve the output performances of triboelectric nanogenerators (TENGs). Comparative analyses of MoS₂@PVDF films with different MoS₂ concentrations and the synergic effect based on postannealing at different temperatures were examined to increase the triboelectric open-circuit voltage and the short-circuit current (∼200 V and ∼11.8 μA, respectively). A further comprehensive study of the structural and electrical changes that occur on the surfaces of the proposed hybrid nanocomposite films revealed that both MoS₂ incorporation into PVDF and postannealing can individually promote the formation of the β-crystal phase and generate polarity in the PVDF. In addition, MoS₂, which provides triboelectric trap states, was found to play a significant role in improving the charge capture capacity of the nanocomposite film and increasing the potential difference between two electrodes of TENGs. The produced electrical energy of the developed wearable TENGs with excellent operational stability for a long duration was utilized to power a variety of mobile smart gadgets in addition to low-power electronic devices. We believe that this study can provide a simple and effective approach to improving the energy-harvesting capabilities of wearable TENGs based on hybrid nanocomposite films.

The effects of N 2 annealing on dielectric properties of NO-based SiO 2 films fabricated through plasma-enhanced chemical vapor deposition and device performance of IGZO TFTs with them were investigated underlying the charge-transport mechanism.

This review presents a comprehensive overview of recent advances in supercapacitor electrode materials, with a particular emphasis on the synergistic interactions between electrode materials and electrolytes. Beyond the conventional categorization of materials such as carbon‐based materials, conducting polymers, and metal oxides, we focus on emerging nanostructured systems including MXenes, transition metal dichalcogenides (TMDs), black phosphorus, and quantum dots. We highlight how engineering the electrode–electrolyte interface—through the use of ionic liquids, gel‐based, and solid‐state electrolytes—can enhance device performance by expanding voltage windows, improving cycling stability, and suppressing self‐discharge. In addition, we discuss recent insights from density functional theory (DFT) and density of states (DOS) analyses that elucidate charge storage mechanisms at the atomic level. By integrating materials selection, interface engineering, and application‐oriented design considerations, this review provides a forward‐looking perspective on the development of next‐generation supercapacitors for use in flexible electronics, electric vehicles, and sustainable energy systems.

The restorative effects of sulfur (S)-passivation through low-temperature (160 °C) post-S annealing on the performance and stability of monolayer molybdenum disulfide (MoS₂) field-effect transistors (FETs) are investigated. S-passivation suppresses S vacancies in the monolayer MoS₂ channel, restoring its intrinsic electrical and material properties and leading to enhancements in field-effect mobility from 8 to 95 cm^-2 V^-1 s^-1 and subthreshold swing from 0.21 to 0.10 V dec^-1. Hole-trapping associated with S vacancies results in the instability of the MoS₂ FETs under a negative bias stress, whereas S interstitials acting as electron trap states contribute to the instability of the S-passivated MoS₂ FETs under a positive bias stress. The effects of S-vacancy suppression on the charge-transport properties of the MoS₂ FETs are assessed by analyzing their activation energies and densities of states based on the reduction in defect states by S-passivation. An N-channel metal-oxide semiconductor inverter consisting of the S-passivated MoS₂ FETs exhibiting improved voltage gains is demonstrated for the first time, indicating its potential application in logic circuits based on monolayer transition-metal dichalcogenides.

Homeostasis is essential in biological neural networks, optimizing information processing and experience-dependent learning by maintaining the balance of neuronal activity. However, conventional two-terminal memristors have limitations in implementing homeostatic functions due to the absence of global regulation ability. Here, three-terminal oxide memtransistor-based homeostatic synapses are demonstrated to perform highly linear synaptic weight update and enhanced accuracy in neuromorphic computing. Particularly, by leveraging the gate control of contact-engineered indium-gallium-zinc-oxide (IGZO) memtransistor, synaptic weight scaling is enabled for high-linearity and precision neuromorphic computing. Moreover, sinusoidal control of gate voltage is demonstrated, possibly enabling the emulation of higher-order synaptic functions. The device structure of IGZO memtransistor is optimized regarding the source/drain electrode materials and an interfacial layer inserted between the IGZO channel and source electrode. As a result, memtransistors exhibiting high current switching ratio of >10⁴ and reliable endurance characteristics are obtained. Furthermore, through the adaptation of synaptic scaling, emulating the homeostasis, non-linearity values of 0.01 and -0.01 are achieved for potentiation and depression, respectively, exhibiting a recognition accuracy of 91.77% for digit images. It is envisioned that the contact-engineered IGZO memtransistors hold significant promise for implementing the homeostasis in neuromorphic computing for high linearity and high efficiency.