Degradation Pattern of Black Phosphorus Multilayer Field-Effect Transistors in Ambient Conditions: Strategy for contact resistance engineering in BP transistors
Appl. Surf. Sci, 2017
72
Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering
Appl. Phys. Lett., 2017
73
Junction-Structure-Dependent Schottky Barrier Inhomogenity and Device Ideality of Monolayer MoS2 Field-Effect Transistors
ACS Appl. Mater. Interfaces, 2017
74
Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer
ACS Appl. Mater. Interfaces, 2017
75
Strong Coulomb scattering effects on low frequency noise in monolayer WS2 field-effect transistors
Appl. Phys. Lett., 2016
76
Electron excess doping and effective Schottky barrier reduction on MoS2/h-BN heterostructure
Nano Lett., 2016
77
Large-Scale Graphene on Hexagonal-BN Hall Elements: Prediction of Sensor Performance without Magnetic Field
ACS Nano, 2016
78
Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics
ACS Appl. Mater. Interfaces, 2016
79
Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure
ACS Appl. Mater. Interfaces, 2016
80
Evaluation of power generated by thermoelectric modules comprising a p-type and n-type single walled carbon nanotube composite paper