Improved ohmic contacts for SiC nanowire devices with nickel-silicide
Jour. Alloy. Compd., 2015
82
Fabrication of controllable and stable In2O3 nanowire transistors using an octadecylphosphonic acid self-assembled monolayer
Nanotechnology, 2015
83
Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors
Jour. Appl. Phys., 2014
84
Separation of interlayer resistance in multilayer MoS2 field-effect transistors
Appl. Phys. Lett., 2014
85
Separation of surface accumulation and bulk neutral channel in junctionless transistors
Appl. Phys. Lett., 2014
86
Nitrogen plasma treatment of parallel-aligned SnO2 nanowire field-effect transistors
Jour. Korean Phys. Soc., 2014
87
Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO TFTs
Thin Solid Films, 2014
88
Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO TFTs
Jour. Appl. Phys., 2014
89
Effect of intertube junctions on the thermoelectric power of monodispersed single walled CNT networks
Jour. Phys. Chem. C, 2014
90
Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature