Design of thin-body double-gated vertical-channel tunneling field-effect transistors for ultralow-power logic circuits
Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Garam Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park
Japanese Journal of Applied Physics: Regular Papers, 2012
102
Split-gate-structure 1T DRAM for retention characteristic improvement
Garam Kim, Sang Wan Kim, Kyung-Chang Ryoo, Jeong-Hoon Oh, Min-Chul Sun, Hyun Woo Kim, Dae Woong Kwon, Jisoo Chang, Sunghun Jung, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2011
103
Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors
Won, Jisoo Chang, Sang Wan Kim, Jae Chul Park, Chang Jung Kim, Byung-Gook Park
Applied Physics Letters, 2011
104
Light effect on negative bias-induced instability of HfInZnO amorphous oxide thin-film transistor
Dae Woong Kwon, Jang Hyun Kim, Jisoo Chang, Sang Wan Kim, Wandong Kim, Jae Chul Park, Chang Jung Kim, Byung-Gook Park
IEEE Transactions on Electron Devices, 2011
105
Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor
Dae Woong Kwon, Jang Hyun Kim, Jisoo Chang, Sang Wan Kim, Wandong Kim, Jae Chul Park, Ihun Song, Chang Jung Kim, U In Jung, Byung-Gook Park
Applied Physics Letters, 2011
106
Rigorous design of 22-nm node 4-terminal SOI FinFETs for reliable low standby power operation with semi-empirical parameters
Seongjae Cho, Shinichi O`uchi, Kazuhiko Endo, Sang Wan Kim, Younghwan Son, In Man Kang, Meishoku Masahara, James S. Harris Jr., Byung-Gook Park
Journal of Semiconductor Technology and Science, 2010
107
Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor
Dae Woong Kwon, Jang Hyun Kim, Jisoo Chang, Sang Wan Kim, Min-Chul Sun, Garam Kim, Hyun Woo Kim, Jae Chul Park, Ihun Song, Chang Jung Kim, U In Jung, Byung-Gook Park
Applied Physics Letters, 2010
108
Fin and recess-channel metal oxide semiconductor field effect transistor for sub-50 nm dynamic random access memory cell
Jae Young Song, Jong Pil Kim, Sang Wan Kim, Jeong-Hoon Oh, Kyung-Chang Ryoo, Min-Chul Sun, Garam Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park
Japanese Journal of Applied Physics: Regular Papers, 2010
109
Fabrication of highly scaled silicon nanowire gate-all-around metal-oxide-semiconductor field effect transistors by using self-aligned local-channel V-gate by optical lithography process
Jae Hyun Park, Jae Young Song, Jong Pil Kim, Sang Wan Kim, Jang-Gn Yun, Byung-Gook Park
Japanese Journal of Applied Physics: Regular Papers, 2010
110
Self-aligned asymmetric metal-oxide-semiconductor field effect transistors fabricated on silicon-on-insulator
Jong Pil Kim, Jae Young Song, Sang Wan Kim, Jae Hyun Park, Woo Young Choi, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park