RnDCircle Logo
arrow left icon

Semiconductor Device Research Lab

서강대학교 본교(제1캠퍼스) 전자공학과

김상완 교수

Tunnel Field-Effect Transistor

FinFET

Ferroelectric Field-Effect Transistor

발행물

전체 논문

115

51

Transient analysis of tunnel field-effect transistor with raised drain
Jang Hyun Kim, Hyun Woo Kim, Seong-Su Shin, Sangwan Kim, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2019

52

Tunnel field effect transistor with ferroelectric gate insulator
Kitae Lee, Junil Lee, Sihyun Kim, Euyhwan Park, Ryoongbin Lee, Hyun-Min Kim, Sangwan Kim, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2019

53

Nonvolatile memory (NVM) operation of tunnel field-effect transistor (TFET) using ferroelectric HfO2 sidewall
Ryoongbin Lee, Kitae Lee, Sihyun Kim, Dae Woong Kwon, Sangwan Kim, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2019

54

Challenges to partial switching of Hf0.8Zr0.2O2 gated ferroelectric FET for multilevel/analog or low-voltage memory operation
Korok Chatterjee, Sangwan Kim, Gonaz Karbasian, Daewoong Kwon, Ava J. Tan, Ajay K. Yadav, Claudy R. Serro, Chenming Hu, Sayeef Salahuddin
IEEE Electron Device Letters, 2019

55

L-shaped tunnel FET with stacked gates to suppress the corner effect
Seong Su Shin, Jang Hyun Kim, Sangwan Kim
Japanese Journal of Applied Physics: Regular Papers, 2019

56

Oxide thin film transistor with a novel gate insulator stack to suppress photo-excited charge injection
Jang Hyun Kim, Jeesoo Chang, Sangwan Kim, Byung-Gook Park
IEEE Transactions on Nanotechnology, 2019

57

Double-gate TFET with vertical channel sandwiched by lightly doped Si
Jang Hyun Kim, Sangwan Kim, Byung-Gook Park
IEEE Transactions on Electron Devices, 2019

58

Design
Hwa Young Gu, Sangwan Kim
,

59

Compact potential model for Si1-xGex/Si heterojunction double-gate tunnel field-effect transistors (TFET)
Sangwan Kim, Woo Young Choi
Journal of Nanoscience and Nanotechnology, 2018

60

A 1T dynamic random access memory cell based on gated thyristor with surrounding gate structure for high scalability
Hyungjin Kim, Sihyun Kim, Hyun-Min Kim, Kitae Kim, Sangwan Kim, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2018