발행물
컨퍼런스
대한전자공학회 추계학술대회
2011
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3차원 적층 NAND 플래시 메모리의 설계 및 특성 분석
NANO Korea
Variation of Threshold Voltage and ON Cell Current induced by Word Line Length Fluctuation with Technology Node Scaling in Virtual Source/Drain NAND Flash Memory
International Technical Conference on Circuits/Systems, Computers and Communications
Design of Gated Twin-Bit (GTB) NAND Flash Memory Considering Gate Induced Drain Leakage (GIDL) Current
Single Electron Transistor with P-type Sidewall Spacer Gates and SONOS Structure
Silicon Nanoelectronics Workshop
Retention Characteristics of 3D GAA(Gate-all-around) Charge Trap Flash Memory