Analysis of Row Hammer Based on Interfacial Trap of BCAT Structure in DRAM.

Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays.

Charge Trap Flash structure with Feedback Field Effect Transistor for Processing in Memory.

Resistive Hydrogen Detection Sensors based on 2 Dimensions–Molybdenum Disulfide Decorated by Palladium Nanoparticles.

A Palladium-Deposited Molybdenum Disulfide-Based Hydrogen Sensor at Room Temperature.

Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure.

Spherical Shallow Trench Isolation with silicon nitride layer in Buried Gate DRAM for reducing pass gate disturbance.

Capacitor-Less Low-Power Neuron Circuit with Multi-Gate Feedback Field Effect Transistor.

ReRAM Switching Performance based on Single-Walled Carbon Nanotubes Wire Electrode.

Multi-gate BCAT Structure and Select Word-line Driver in DRAM for Reduction of GIDL.