발행물
컨퍼런스
ICAE 2023 국제학술대회
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Switching Characteristics of Ga2O3-Based MOSFETs with P-type Oxide Materials
RF-Sputtered Nickel Oxide Thin Film Integration for Enhanced Performance in NiO/4H-SiC Heterojunction Devices
Design and analysis of high speed4H-SiC trench VDMOSFET with split-gate structure
Electrical Properties and Switching Characteristics of β-Ga2O3 Schottky Barrier Diodes with Edge Termination
High-Performance SiC MPS Diode with improvedSnapback Characteristics