,

A 145？μW Always-on Touch Screen Readout and Always-on Haptic Driver IC for 1.26-Inch Circular Display of Wearable Device

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Ga2O3/4H-SiC Heterostructure Schottkky Diodes

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Investigating the Influence of Post-Deposition Annealing on the Elecrical Properties of Lithium Phosphate Deposited on Silicon Carbide

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Effects of Post-Annealing on Temperature dependent Elecrical Characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky Barrier Diodes

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Analysis of Deep Level Traps in Post-annealed k-Ga2O3/SiC Heterojunction Diodes Grown by Mist-CVD