Atomic Layer Deposition #1
CN-1 / Atomic Basic - Thermal ALD - Traveling-wave type chamber - Wafer Size : ≤ 6 inch - Precursor : Al, Sr, Ti, Zr, Zn / Reactant : H2O, O3, CH3COCH3 담당자 : 김주형, 정상연
Atomic Layer Deposition #2 (Plasma ALD)
NAINSOL / PEALD System - Plasma Enhanced ALD (ICP) - Wafer Size : ≤ 4 inch - Precursor : Al, Ru, Mo / Reactant : H2O, O3, H2/N2 담당자 : 조승민, 유경훈
Atomic Layer Deposition #3
Ultech / SPACE-T Thermal ALD - Travelling-wave type Chamber - Wafer Size : ≤ 6 inch - Precursor : Al, Ti, Zr, Zn / Reactant : H2O, O3 담당자 : 조석호, 홍주안
Magnetron Sputter
Daon corporation / Sputtering system - Up to 10rpm and Heatable up to 500℃ - Wafer size : ≤ 4 inch - 2” sputter gun (1kW DC, 2sets / 100W RF, 1set) - Base pressure : ≈ 5.0ｘ10 Torr - Co-sputtering by upstream 담당자 : 조석호, 유경훈
Tube Furnace
SH scientific / SH-FU-50STG - Temperature Range : ≤ 1200 °C - Applicable Tube Diameter : 50 Φ - Dimension Hot Zone : Length 300 mm - Atmosphere : Ar, O2 , N2 담당자 : 김주형, 홍주안
Rapid Thermal Anneal
Daon corporation / TTowa - C4V3 - Temperature Range : ≤ 1000 °C - Heat up Time to 1000 °C : ≈ 30 seconds (workable for consecutive Max. 1hour 1100℃) - Sample Size : ≤ 4 inch - Gas Flow Control : H2 , N2 500 sccm / O2 500 sccm / Ar 500 sccm by MFC 담당자 : 조승민, 정상연
Thermal Evaporator
I.T.S / Evaporator system - Pump: Roughing(Rotary pump, Dry pump), Main(Turbo pump, Cryo pump) - Substrate size ~ 𝜙320nm - Temperature <800°C (±5%) - Evaporation source : Thermal 담당자 : 조승민, 홍주안
O3 generator
OZONE TECH / CN-1 - Max 220 g/m^3 - Flow range : 2000 sccm SHIN-A E&C Co., LTD. / Water Chiller - Cooling capacity : 1500 Kcal/hr 담당자 : 김주형, 유경훈
Microwave Annealing Furnace
Unicera / SINTERMAT 1600 - Temp. range : ≤ 1500 ℃ - Heating rate : 50℃/min (Max. 100℃/min) - Hot zone : 90 x 90 x 45 mm3 - 10 steps programmable 담당자 : 조승민, 유경훈
X-ray Fluorescence (XRF) Spectroscopy
Nayur / NDA-200 EDXRF - Analysis elements: S16~U92 - Analysis time : 100~200s - Resolution : 149eV - Spot size: 0.5mm, 1.0mm, 3.0mm, 4x4mm 담당자 : 조승민, 홍주안