발행물

전체 논문

129

41

First principles calculation of band offsets and defect energy levels in Al2O3/β-Ga2O3 interface structures with point defects
Junsung Park, Sung-Min Hong*
Journal of Semiconductor Technology and Science, 2019

42

Theoretical study of electron transport properties in GaN based HEMTs using a deterministic multi-subband Boltzmann transport equation solver
Suhyeong Cha, Sung-Min Hong*
IEEE Transactions on Electron Devices, 2019

43

Compact charge modeling of double-gate MOSFETs considering the density-gradient equation
Sung-Min Hong*
IEEE Journal of the Electron Devices Society, 2019

44

Simulation study of enhancement mode multi-gate vertical gallium oxide MOSFETs
Junsung Park, Sung-Min Hong*
ECS Journal of Solid State Science and Technology, 2019

45

An efficient method for subband calculation of cylindrical nanowire transistors using Fourier harmonics expansion
Geon-Tae Jang, Sung-Min Hong*
Journal of Computational Electronics, 2019

46

First principles approach to analyze defect-induced multiphonon transition at the Si-SiO2 interface
Junsung Park, Sung-Min Hong*
Journal of Semiconductor Technology and Science, 2019

47

Improved ohmic contact by pre-metallization annealing process in quaternary In₀.₀₄Al₀.₆₅Ga₀.₃₁N/GaN HEMTs
Ha Jin Mun, Ji Hyun Hwang, Young-Ki Kwon, Sung-Min Hong, Jae-Hyung Jang
Physica Status Solidi A, 2018

48

Transient simulation of semiconductor devices using a deterministic Boltzmann equation solver,
Sung-Min Hong*, Jae-Hyung Jang
IEEE Journal of the Electron Devices Society, 2018

49

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid
Se-I Oh, Janardhanan Rani, Sung-Min Hong, Jae-Hyung Jang
Nanoscale, 2017

50

Substrate partitioning scheme for compact charge modeling of multigate MOSFETs
Sung-Min Hong*, Junsung Park
IEEE Journal of the Electron Devices Society, 2017