An efficient approach to include full band effects in deterministic Boltzmann equation solver based on high-order spherical harmonics expansion
Seonghoon Jin, Sung-Min Hong, Christoph Jungemann
IEEE Transactions on Electron Devices, 2011
62
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver based on a spherical harmonics expansion
Sung-Min Hong, Christoph Jungemann
Journal of Computational Electronics, 2010
63
A deterministic Boltzmann equation solver based on a higher order spherical harmonics expansion with full-band effect
Sung-Min Hong, Gregor Matz, Christoph Jungemann
IEEE Transactions on Electron Devices, 2010
64
Physics-based analysis and simulation of 1/f noise in MOSFETs under large-signal operation
Sung-Min Hong, Chan Hyeong Park, Young June Park, Hong Shick Min
IEEE Transactions on Electron Devices, 2010
65
Statistical noise analysis of CMOS image sensors in dark condition
Jun-Myung Woo, Hong-Hyun Park, Sung-Min Hong, In-Young Chung, Hong Shick Min, Young June Park
IEEE Transactions on Electron Devices, 2009
66
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
S.-M. Hong, C. Jungemann
Journal of Computational Electronics, 2009
67
A proposal on an optimized device structure with experimental studies on recent devices for the DRAM cell transistor
Myoung Jin Lee, Seonghoon Jin, Chang-Ki Baek, Sung-Min Hong, Soo-Young Park, Hong Hyun Park, Sang-Don Lee, Sung-Woong Chung, Jae-Goan Jeong, Sung-Joo Hong, Sung-Wook Park, In-Young Chung, Young June Park, Hong Shick Min
IEEE Transactions on Electron Devices, 2007
68
Governing equations of the terminal current Green’s functions and their application to derivation of the Nyquist theorem for multi-terminal semiconductor devices
Sung-Min Hong, Chan Hyeong Park, Hong Shick Min, Young June Park
Journal of Applied Physics, 2007
69
Physics-based analysis and simulation of phase noise in oscillators
Sung-Min Hong, Chan Hyeong Park, Hong Shick Min, Young June Park
IEEE Transactions on Electron Devices, 2006
70
Enhanced Writability of 4P4N CFET SRAM Cell With Transmission Gates
Hong, SM[Hong, Sung-Min], Jung, SW[Jung, Seung-Woo], Kim, IK[Kim, In Ki]