발행물

전체 논문

129

81

Optimization of Nitrogen Ion Implantation Condition for beta-Ga2O3 Vertical MOSFETs via Process and Device Simulation
Hong, SM[Hong, Sung-Min], Kim, IK[Kim, In Ki], Cha, S[Cha, Suhyeong]
IEEE TRANSACTIONS ON ELECTRON DEVICES, 202212

82

Output Characteristics of Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC
Lee, S[Lee, Sungbae], Hong, SM[Hong, Sung-Min], Choi, PH[Choi, Pyeung Hwi], Kim, YP[Kim, Yong Pyo], Kim, MS[Kim, Min-Seong], Ryu, J[Ryu, Jiheon], Baek, SH[Baek, Sung-Hyun], Jang, JH[Jang, Jae-Hyung]
IEEE ACCESS, 202210

83

Study of beta-Ga2O3-Based Thin-Channel MODFET Devices Using a Coupled Drift-Diffusion/Multisubband BTE Solver
Hong, SM[Hong, Sung-Min], Cha, S[Cha, Suhyeong]
IEEE TRANSACTIONS ON ELECTRON DEVICES, 202209

84

Derivation of a Universal Charge Model for Multigate MOS Structures With Arbitrary Cross Sections
Hong, SM[Hong, Sung-Min], Lee, KW[Lee, Kwang-Woon]
IEEE Transactions on Electron Devices, 202206

85

Vacuum and Low-Temperature Characteristics of Silicon Oxynitride-Based Bipolar RRAM
Hong, SM[Hong, Sung-Min], Das, NC[Das, Nayan C.], Kim, M[Kim, Minjae], Jang, JH[Jang, Jae-Hyung]
Micromachines, 202204

86

Low-temperature characteristics of magnesium fluoride based bipolar RRAM devices
Hong, SM[Hong, Sung-Min], Das, NC[Das, Nayan C.], Kim, M[Kim, Minjae], Rani, JR[Rani, Jarnardhanan, Jang, JH[Jang, Jae-Hyung]
NANOSCALE, 202203

87

Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM
Hong, SM[Hong, Sung-Min], Das, NC[Das, Nayan C.], Kim, M[Kim, Minjae], Kwak, DU[Kwak, Dong-uk], Rani, JR[Rani, Jarnardhanan, Jang, JH[Jang, Jae-Hyung]
Nanomaterials, 202202

88

Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC
Lee, S[Lee, Sungbae], Hong, SM[Hong, Sung-Min], Choi, PH[Choi, Pyeung Hwi], Kim, YP[Kim, Yong Pyo], Kim, MS[Kim, Min-Seong], Ryu, J[Ryu, Jiheon], Baek, SH[Baek, Sung-Hyun], Jang, JH[Jang, Jae-Hyung]
IEEE TRANSACTIONS ON ELECTRON DEVICES, 202112

89

Acceleration of Semiconductor Device Simulation With Approximate Solutions Predicted by Trained Neural Networks
Hong, SM[Hong, Sung-Min], Choi, J[Choi, Jonghyun], Han, SC[Han, Seung-Cheol]
IEEE TRANSACTIONS ON ELECTRON DEVICES, 202111

90

Special Issue on "New Simulation Methodologies for Next-Generation TCAD Tools" Foreword
Hong, SM[Hong, Sung-Min], Jungemann, C[Jungemann, Chri, Bonani, F[Bonani, Fabrizio], Cea, SM[Cea, Stephen M.], Gnani, E[Gnani, Elena], Jin, S[Jin, Seonghoon], Liu, XY[Liu, Xiaoyan], Moroz, V[Moroz, Victor], Verhulst, A[Verhulst, Anne]
IEEE Transactions on Electron Devices, 202111