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전체 논문
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91
A novel fabrication method for the nanoscale tunneling field effect transistor
Hyun Woo Kim, Jang Hyun Kim, Sang Wan Kim, Min-Chul Sun, Garam Kim, Euyhwan Park, Hyungjin Kim, Kyung Wan Kim, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2012.07
92
Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology
Min-Chul Sun, Garam Kim, Sang Wan Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park
Journal of Nanoscience and Nanotechnology, 2012.07
93
Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance
Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, James S. Harris, Jr.
IEICE Electronics Express, 2012.05
94
Comparative study on top- and bottom-source vertical-channel tunnel field-effect transistors
Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, Byung-Gook Park
IEICE Transactions on Electronics, 2012.05
95
Effects of conductive defects on unipolar RRAM for the improvement of resistive switching characteristics
Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hyungjin Kim, Byung-Gook Park
IEICE Transactions on Electronics, 2012.05
96
Novel three dimensional (3D) NAND flash memory array having tied bit-line and ground select transistor (TiGer)
Se Hwan Park, Yoon Kim, Wandong Kim, Joo Yun Seo, Hyungjin Kim, Byung-Gook Park
IEICE Transactions on Electronics, 2012.05
97
Study on threshold voltage control of tunnel field-effect transistors using VT-control doping region
Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Byung-Gook Park
IEICE Transactions on Electronics, 2012.05
98
Design of thin-body double-gated vertical-channel tunneling field-effect transistors for ultralow-power logic circuits
Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Garam Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park
Japanese Journal of Applied Physics (JJAP), 2012.04
99
Mitigating imperfections in mixed-signal neuromorphic circuits
Zahra Fahimi#, Mohmood Reza Mahmoodi#, Michael Klachko#, Hussein Nili, Hyungjin Kim, Dmitri Strukov*
2021.07
100
2C-Ternary Content Addressable Memory in Memcapacitor Crossbar Array with NAND Flash Structure
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