RnDCircle Logo
김형진 연구실
한양대학교 신소재공학부
김형진 교수
기본 정보
연구 분야
프로젝트
발행물
구성원

김형진 연구실

한양대학교 신소재공학부 김형진 교수

김형진 연구실은 반도체 소자·공정 기술을 바탕으로 멤리스터, 시냅스 소자, 크로스바 어레이, 3차원 집적 메모리 및 기능성 재료를 활용한 뉴로모픽 컴퓨팅과 인메모리 컴퓨팅을 연구하며, 초저전력 AI 반도체, 하드웨어 인공지능, 광전자 시냅스, 스마트 센서 및 모빌리티 응용까지 아우르는 차세대 반도체 시스템을 개발하고 있다.

대표 연구 분야
연구 영역 전체보기
멤리스터 기반 뉴로모픽 반도체 소자 및 인메모리 컴퓨팅 thumbnail
멤리스터 기반 뉴로모픽 반도체 소자 및 인메모리 컴퓨팅
주요 논문
5
논문 전체보기
1
article
|
인용수 9
·
2025
Optically Tunable Synaptic Plasticity and Memory Emulation in Au‐Nanoparticle Enhanced HfTiO <sub>x</sub> /Al <sub>2</sub> O <sub>3</sub> ‐Based Photonic Memristors
Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim, Sungjun Kim
IF 19
Advanced Functional Materials
Abstract The optically stimulated synaptic device incorporates gold nanoparticles (Au‐NPs) embedded within an atomic‐layer‐deposited HfTiO x /Al 2 O 3 bilayer, which enables the photonic modulation of synaptic plasticity. The HfTiO x /Au‐NP interface enhances visible light absorption and utilization efficiency by generating ionized oxygen vacancies through the neutral oxygen vacancy sites, thereby modulating the device conductance states. This architecture effectively mimics key biological synaptic functions, including paired‐pulse facilitation (PPF), memory transitions from short‐term to long‐term memory (STM to LTM), and spike‐rate‐dependent plasticity (SRDP). The device further demonstrates optical logic operations and Pavlovian associative learning under dual‐wavelength light stimulation (405 and 450 nm). The intensity‐dependent generation of photocarriers and their nonlinear interaction with oxygen vacancies enable robust synaptic behavior, facilitating the emulation of human visual perception in a 4 × 4 optoelectronic synapse array with short‐term memory capabilities. Moreover, the wavelength‐ and sequence‐dependent synaptic responses can be finely controlled for the design of light‐programmable reservoir computing systems. These results demonstrate the potential of the HfTiO x /Au‐NP/Al 2 O 3 switching layer as a promising platform for efficient neuromorphic computing and vision‐based information processing using integrated optoelectronic synapses.
https://doi.org/10.1002/adfm.202510663
Materials science
Emulation
Memristor
Photonics
Nanotechnology
Nanoparticle
Optoelectronics
Electronic engineering
2
article
|
인용수 5
·
2024
Stabilizing Analog Signal Processing of Artificial Synapse Under Heat Fluctuations Through Light‐Temperature Antagonistic Operation
Diandian Chen, Yongsuk Choi, Chuan Qian, Dong Gue Roe, Hyungjin Kim, Sae Byeok Jo, Youngjae Yoo, Dongsheng Tang, Jeong Ho Cho
IF 19
Advanced Functional Materials
Abstract Data processing through artificial synapses is gaining attention owing to the emergence of neuromorphic computing. Analog processing via these synapses can simultaneously handle large volumes of data; however, it is susceptible to interference from various environmental factors. Specifically, temperature changes can significantly affect overall signal characteristics, leading to substantial errors. Herein, an organic heterojunction‐based artificial synapse is presented that is capable of light–temperature antagonistic operations. The properly aligned band structure and trap sites, which are facilitated by oxygen penetration, enable the implementation of controlled synaptic characteristics, depending on temperature and light conditions. An increase in temperature resulted in a thermally enhanced synaptic current, while light irradiation reduced the synaptic current, with the reduction degree being dependent on the light intensity. Finally, a biomimetic analog processor system capable of signal stabilization under drastic temperature changes is implemented. The artificial synapse, which operates using a light–temperature antagonistic operation, can significantly expand the potential applications of artificial intelligence hardware.
https://doi.org/10.1002/adfm.202405244
Materials science
Synapse
SIGNAL (programming language)
Signal processing
Optoelectronics
Nanotechnology
Biological system
Electronic engineering
Neuroscience
Computer science
3
article
|
인용수 23
·
2023
Multibit, Lead‐Free Cs<sub>2</sub>SnI<sub>6</sub> Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application
Ajit Kumar, Krishnaiah Mokurala, Jinwoo Park, Dhananjay Mishra, Bidyashakti Dash, Hyeon‐Bin Jo, Geun Lee, Sangwook Youn, Hyungjin Kim, Sung Hun Jin
IF 19
Advanced Functional Materials
Abstract In the realm of neuromorphic computing, integrating Binary Neural Networks (BNN) with non‐volatile memory based on emerging materials can be a promising avenue for introducing novel functionalities. This study underscores the viability of lead‐free, air‐stable Cs 2 SnI 6 (CSI) based resistive random access memory (RRAM) devices as synaptic weights in neuromorphic architectures, specifically for BNNs applications. Herein, hydrothermally synthesized CSI perovskites are explored as a resistive layer in RRAM devices either on the rigid or flexible substrate, highlighting reproducible multibit switching with self‐compliance, low‐ resistance‐state (LRS) variations, a decent On/Off ratio(or retention) of ≈10 3 (or 10 4 s), and endurance exceeding 300 cycles. Moreover, a comprehensive evaluation with the 32 × 32 × 3 RGB CIFAR‐10 dataset reveals that binary convolutional neural networks (BCNN) trained solely on binary weight values can achieve competitive rates of accuracy comparable to those of their analog weight counterparts. These findings highlight the dominance of the LRS for CSI RRAM with self‐compliance in a weighted configuration and minimal influence of the high resistance state despite substantial fluctuations for flexible CSI RRAM under varying bending radii. With its unique electrical switching capabilities, the CSI RRAM is highly anticipated to emerge as a promising candidate for embedded AI systems, especially in IoT devices and wearables.
https://doi.org/10.1002/adfm.202310780
Resistive random-access memory
Neuromorphic engineering
Materials science
Binary number
Memristor
Resistive touchscreen
Artificial neural network
Computer science
Optoelectronics
Nanotechnology
정부 과제
27
과제 전체보기
1
2025년 3월-2027년 12월
|973,000,000
1000 TOPS/W 이상 달성을 위한 end-to-end analog 뉴로모픽 소자, 알고리즘, 아키텍처 개발
○1000 TOPS/W 이상 달성을 위한 end-to-end analog 뉴로모픽 소자, 알고리즘, 아키텍처 개발1. 1000 TOPS/W 달성에 필수적인 전력 효율성, 신뢰성, 소자 집적도가 높은 훈련용 3D 시냅스 소자를 상변화 메모리(3D V-PCM)와 3D Ferroelectric NAND 기술로 구현 2. 각각 훈련과 추론에 요구되는 성능에 최적화...
end-to-end 아날로그
시냅스-링크 알고리즘
평형 전파 알고리즘
상변화 메모리
3차원 단일공정 집적
2
2025년 3월-2027년 12월
|753,667,000
1000 TOPS/W 이상 달성을 위한 end-to-end analog 뉴로모픽 소자, 알고리즘, 아키텍처 개발
○1000 TOPS/W 이상 달성을 위한 end-to-end analog 뉴로모픽 소자, 알고리즘, 아키텍처 개발1. 1000 TOPS/W 달성에 필수적인 전력 효율성, 신뢰성, 소자 집적도가 높은 훈련용 3D 시냅스 소자를 상변화 메모리(3D V-PCM)와 3D Ferroelectric NAND 기술로 구현 2. 각각 훈련과 추론에 요구되는 성능에 최적화...
end-to-end 아날로그
시냅스-링크 알고리즘
평형 전파 알고리즘
상변화 메모리
3차원 단일공정 집적
3
2024년 9월-2027년 9월
|300,000,000
Si/IGZO 모놀리식 3D 집적 기반 다기능 AI 가속기 구현
Si/IGZO 3차원 적층형 모놀리식 집적 기반 다기능 저전력 AI 가속기 개발
Si/IGZO 공동 집적
모놀리식 3D 집적
AI 가속기
플래시 메모리
시냅스 뉴런 어레이
최신 특허
특허 전체보기
상태출원연도과제명출원번호상세정보
공개2024멤커패시터 기반 난수 발생기 및 난수 발생 방법1020240093774
등록2022인공신경망 구현을 위한 3차원 적층형 시냅스 어레이 스트링1020220143504
등록2022고신뢰성 물리적 복제불가 함수 기술1020220070009
전체 특허

멤커패시터 기반 난수 발생기 및 난수 발생 방법

상태
공개
출원연도
2024
출원번호
1020240093774

인공신경망 구현을 위한 3차원 적층형 시냅스 어레이 스트링

상태
등록
출원연도
2022
출원번호
1020220143504

고신뢰성 물리적 복제불가 함수 기술

상태
등록
출원연도
2022
출원번호
1020220070009