발행물

전체 논문

217

51

Effect of threshold voltage window and variation of organic synaptic transistor for neuromorphic system
Yeongjin Hwang, Jeong Hoon Jeon, Juhyun Lee, Jonghyuk Yoon, Felix Sunjoo Kim*, Hyungjin Kim*
Journal of Nanoscience and Nanotechnology, 2021.08

52

Architecture and process integration overview of 3D NAND flash technologies
Geun Ho Lee, Sungmin Hwang, Junsu Yu, Hyungjin Kim*
Applied Sciences, 2021.07

53

3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system
Tae-Hyeon Kim, Jaewoong Lee, Sungjoon Kim, Jinwoo Park, Byung-Gook Park*, Hyungjin Kim*
Nanotechnology, 2021.07

54

Quantized weight transfer method using spike-timing-dependent plasticity for hardware spiking neural network
Sungmin Hwang, Hyungjin Kim*, Byung-Gook Park*
Applied Sciences, 2021.02

55

Bipolar and complementary resistive switching characteristics and neuromorphic system simulation in a Pt/ZnO/TiN synaptic device
Sobia Ali Khan, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim*, Sungjun Kim*
Nanomaterials, 2021

56

Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM
Sungjoon Kim, Tae-Hyeon Kim, Hyungjin Kim*, Byung-Gook Park*
Applied Physics Letters, 2020.11

57

AND flash array based on charge trap flash for implementation of convolutional neural networks
Hyun-Seok Choi, Hyungjin Kim, Jong-Ho Lee, Byung-Gook Park, Yoon Kim
IEEE Electron Device Letters, 2020.11

58

Digital and analog switching characteristics of InGaZnO memristor depending on top electrode material for neuromorphic system
Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim*, Dae Hwan Kim*
IEEE Access, 2020.10

59

Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park*, Hyungjin Kim*
Applied Physics Letters, 2020.10

60

A strong physically unclonable function with >280 CRPs and <1.4% BER using passive ReRAM technology
Mahmood R. Mahmoodi, Zahra Fahimi, Shabnam Larimian, Hussein Nili, Hyungjin Kim, Dmitri Strukov
IEEE Solid-State Circuits Letters, 2020.07