Logic-in-memory cell enabling binary and ternary Boolean logics

Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes

Binarized neural network comprising quasi-nonvolatile memory devices for neuromorphic computing

Capacitorless Two-Transistor Dynamic Random-Access Memory Cells Comprising Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors for the Multiply-Accumulate Operation

Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings

Delay characteristics of quasi-nonvolatile memory devices operating in positive feedback mechanism

Stateful Logic Operation of Gated Silicon Diodes for In-Memory Computing

Bidirectional Synaptic Operations of Triple-Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics

Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors