Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure

Binarized neural network of diode array with high concordance to vector-matrix multiplication

Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors

Delay characteristics of quasi-nonvolatile memory devices operating in positive feedback mechanism

Capacitorless Two-Transistor Dynamic Random-Access Memory Cells Comprising Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors for the Multiply-Accumulate Operation

Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings

Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

Stateful Logic Operation of Gated Silicon Diodes for In-Memory Computing

Bidirectional Synaptic Operations of Triple-Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics

Binarized Neural Network Comprising Quasi-Nonvolatile Memory Devices for Neuromorphic Computing