Anharmonic decay of phonons in silicon from third-order density-functional pertubation theory
김용
J. Kor. Phys. Soc., 1997
162
Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition
김용
J. Appl. Phys., 1997
163
Nucleation transition for InGaAs islands on vicinal (100) surfaces
김용
Phys. Rev. Lett., 1997
164
탄소도핑된 GaAs 와 AlGaAs 의 전기적 성질의 기판 방향에 대한 의존성
김용, 0, 0, 0, 0, 0, 0, 0
응용물리, 1997
165
Dependence of electrical properties on the crystallographic orientation of CBr4 -doped epilayers grown on GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition
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Microelectronics J. - 직접입력, 1997
166
Lateral growth rate control of GaAs on patterned substrates by CCl4, CBr4 during MOCVD
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J. Cryst. Growth, 1997
167
Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition
김용
J. Kor. Phys. Soc., 1997
168
Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing
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Appl. Phys. Lett., 1997
169
Electrical properties of heavily carbon-doped GaAs epilayers grown by atmospheric pressure metalorganic chemical vapor deposition
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Jpn. J. Appl. Phys., 1996
170
Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate