Growth of bimodal Sn-catalyzed CdS nanowires by using tin sulfide
M. S. Song, Yong Kim
J. Phys. Chem. C, 2014
13
Phase separation induced by Au catalysts in ternary InGaAs nanowires
Y-N. Guo, H-Y. Xu, G. J. Auchterlonie, T. Burgess, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, H-B. Shu, X-S. Chen, W. Lu, Yong Kim, J. Zou
Nano Lett., 2013
14
Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates
J. H. Kang, Q. Gao, P. Parkinson, H. J. Joyce, H. H. Tan, Yong Kim, Y. Guo, H. Xu, J. Zou, C. Jagadish
Nanotechnology, 2012
15
ZnTe nanowires with oxygen intermediate band grown by bismuth-catalyzed physical vapor transport
So Ra Moon, Jung Hyuk Kim, Yong Kim
J. Phy. Chem C, 2012
16
Taper-free and kinked Ge nanowires grown on silicon via purging and the two temperature process
Jung Hyuk Kim, So Ra Moon, Yong Kim, Z. G. Chen, J. Zou, D. Y. Choi, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish
Nanotechnology, 2012
17
Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process
Jung Hyuk Kim, So Ra Moon, Hyun Sik Yoon, Jae Hun Jung, Yong Kim, Z. G. Chen, J. Zou, D. Y. Choi, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish
Cryst. Growth Des., 2012
18
Tailoring GaAs, InAs, InGaAs nanowires for optoelectronic device applications
H. J. Joyce, Q. Gao, J. Wong-Leung, Yong Kim, H. H. Tan, C. Jagadish
IEEE J. Select. Topics Quant. Elec., 2011
19
III–V semiconductor nanowires for optoelectronic device applications
H. J. Joyce, Q. Gao, H.H. Tan, C.Jagadish, Yong Kim, J. Zou, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, P. Parkinson, M. B. Johnston
Progress in Quantum Electronics, 2011
20
Defect-free GaAs/AlGaAs core-shell nanowires on Si substrates
Jung-Hyun Kang, Q. Gao, H. J. Joyce, H. H. Tan, C. Jagadish, Yong Kim, Y. Guo, H. Xu, J. Zou, M. A. Fickenscher, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice