Disturbance characteristics of charge trap flash memory with tunneling field-effect transistor
Ning Xi, Eou-Sik Cho, Woo Young Choi, Il Hwan Cho
Japanese Journal of Applied Physics, 2014
22
Scaling Down Characteristics of Vertical Channel Phase Change Random Access Memory (VPCRAM)
Chun Woong Park, Chongdae Park, Woo Young Choi, Dongsun Seo, Cherlhyun Jeong, Il Hwan Cho
Journal of Semiconductor Technology and Science, 2014
23
Thermal analysis of self-heating in saddle MOSFET devices
Hyun Gon Oh, Cherlhyun Jeong, Il Hwan Cho
Japanese Journal of Applied Physics, 2014
24
Effects of the Duty Ratio on the Niobium Oxide Film Deposited by Pulsed-DC Magnetron Sputtering Methods
Ji Mi Eom, Hyun Gon Oh, Il Hwan Cho, Sang Jik Kwon, Eou Sik Cho
Journal of Nanoscience and Nanotechnology, 2013
25
Reduction of ambipolar characteristics of vertical channel tunneling field-effect transistor by using dielectric sidewall
ChunWoong Park, Woo Young Choi, Jong-Ho Lee, Il Hwan Cho
Semiconductor Science and Technology, 2013
26
Development of sacrificial layer wet etch process of TiNi for nano-electro-mechanical device application
Byung Kyu Park, Woo Young Choi, Eou Sik Cho, Il Hwan Cho
Journal of Semiconductor Technology and Science, 2013
27
Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory
Woo Young Choi, Min Su Han, Bo ram Han, Dongsun Seo, Il Hwan Cho
IEICE Transactions on Electronics, 2013
28
Low Frequency Noise Characteristics on Al/Nb2O5/p-type Schottky Diode Fabricated by Pulsed DC Magnetron Sputtering
Hyun Gon Oh, Kyung Soo Kim, JiMiEom, Sang Jik Kwon, EouSik Cho, Jong-Ho Lee, Il Hwan Cho
Molecular Crystals and Liquid Crystals, 2013
29
Comparative investigation of endurance and bias temperature instability characteristics in metal-Al2O3-nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory
Dae Hwan Kim, Sungwook Park, Yujeong Seo, Tae Geun Kim, Dong Myong Kim, Il Hwan Cho
Journal of Semiconductor Technology and Science, 2012
30
Disturbance Characteristics of Vertical Channel Phase Change Random Access Memory Array