A 32nm SoC platform technology with 2<sup>nd</sup> generation high-k/metal gate transistors optimized for ultra low power, high performance, and high density product applications
C.-H. Jan, M. Agostinelli, Markus J. Buehler, Zekai Chen, S.-J. Choi, G. Curello, H. Deshpande, S. Gannavaram, W. Hafez, U. Jalan, Myounggon Kang, P. Kolar, K. Komeyli, Barbara Landau, Adam Lake, N. Lazo, Stanley Lee, T. Leo, Jiefeng Lin, N. Lindert, Shuo Ma, Lisa McGill, C. J. Meining, Ayushi Paliwal, Jang Hyeok Park, K. Phoa, I. Post, Nilay Pradhan, M. B. Prince, Anisur Rahman, J. Rizk, L. Rockford, G. Sacks, A. Schmitz, Hiroyuki Tashiro, C. Tsai, P. Vandervoorn, Jian Xu, L. Yang, J.-Y. Yeh, J. Yip, Kedong Zhang, Yu Zhang, Peng Bai
2009