발행물

전체 논문

114

31

Cryogenic Characterization of RF low-noise amplifiers utilizing inverse-mode SiGe HBTs for extreme environment applications
I. Song, A. S. Cardoso, H. Ying, M.-K. Cho, J. D. Cressler
IEEE Transactions on Device and Materials Reliability, 2018.12

32

Design and Analysis of a Low-Loss, Wideband Digital Step Attenuator with minimized amplitude and phase variations
I. Song, M.-K. Cho, J. D. Cressler
IEEE Journal of Solid-State Circuits, 2018.08

33

A 28-GHz Switchless, SiGe Bi-directional Amplifier Using Neutralized Common-Emitter Differential Pair
Y. Gong, M.-K. Cho, I. Song, J. D. Cressler
IEEE Microwave and Wireless Components Letters, 2018.08

34

A SiGe-BiCMOS Wideband Active Bi-directional Digital Step Attenuator with Bandwidth Tuning and Equalization
M.-K. Cho, I. Song, Z. E. Fleetwood, J. D. Cressler
IEEE Transactions on Microwave Theory and Techniques, 2018.08

35

p-n-p-based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform
I. Song, M.-K. Cho, Z. E. Fleetwood, Y. Gong, S. Pavlidis, S. P. Buchner, D. McMorrow, P. Paki, M. Kaynak, J. D. Cressler
IEEE Transactions on Nuclear Science, 2018

36

SiGe HBT Profiles with Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients
Z. E. Fleetwood, A. Ildefonso, G. N. Tzintzarov, B. Wier, U. Raghunathan, M.-K. Cho, I. Song, M. T. Wachter, D. Nergui, A. Khachatrian, J. H. Warner, P. McMarr, H. Hughes, E. Zhang, D. McMorrow, P. Paki, A. Joseph, V. Jain, J. D. Cressler
IEEE Transactions on Nuclear Science, 2018

37

An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology
M.-K. Cho, I. Song*, S. Pavlidis, Z. E. Fleetwood, S. P. Buchner, D. McMorrow, P. Paki, J. D. Cressler
IEEE Transactions on Nuclear Science, 2018

38

Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver
A. Ildefonso, I. Song, G. N. Tzintzarov, Z. E. Fleetwood, N. E. Lourenco, M. T. Wachter, J. D. Cressler
IEEE Transactions on Nuclear Science, 2017.08

39

On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients
I. Song, M.-K. Cho, M. A. Oakley, A. Ildefonso, I. Ju, S. P. Buchner, D. McMorrow, P. Paki, J. D. Cressler
IEEE Transactions on Nuclear Science, 2017.05

40

The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the Mitigation of Single-Event Transients
I. Song, M.-K. Cho, N. E. Lourenco, Z. E. Fleetwood, S. Jung, N. J.-H. Roche, A. Khachatrian, S. P. Buchner, D. McMorrow, P. Paki, J. D. Cressler
IEEE Transactions on Nuclear Science, 2017