A SiGe-BiCMOS Wideband (2-22 GHz) Active Power Divider/Combiner Circuit Supporting Bidirectional Operation
I. Song, M.-K. Cho, J.-G. Kim, J. D. Cressler
IEEE Transactions on Microwave Theory and Techniques, 2016.12
42
Inverse Class-F X-Band SiGe HBT Power Amplifier with 44% PAE and 24.5 dBm Peak Output Power
I. Song, A. Ç. Ulusoy, M. A. Oakley, I. Ju, M.-K. Cho, J. D. Cressler
Microwave and Optical Technology Letters, 2016.12
43
A Compact, Active SiGe Power Divider with Multi-octave Bandwidth
M.-K. Cho, I. Song*, I. Ju, J. D. Cressler
IEEE Microwave and Wireless Components Letters, 2016.11
44
A Compact, Wideband Lumped-Element Wilkinson Power Divider/Combiner Using Symmetric Inductors with Embedded Capacitors
I. Ju, M.-K. Cho, I. Song, J. D. Cressler
IEEE Microwave and Wireless Components Letters, 2016.08
45
An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers
I. Song, U. S. Raghunathan, N. E. Lourenco, Z. E. Fleetwood, M. A. Oakley, S. Jung, M.-K. Cho, N. J.-H. Roche, A. Khachatrian, J. H. Warner, S. P. Buchner, D. McMorrow, P. Paki, J. D. Cressler
IEEE Transactions on Nuclear Science, 2016.04
46
An Active Bi-directional SiGe DPDT Switch with Multi-octave Bandwidth
M.-K. Cho, I. Song, J.-G. Kim, J. D. Cressler
IEEE Microwave and Wireless Components Letters, 2016.04
47
An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier
N. E. Lourenco, S. Zeinolabedinzadeh, A. Ildefonso, Z. E. Fleetwood, C. T. Coen, I. Song, S. Jung, F. Inanlou, N. J.-H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki, J. D. Cressler
IEEE Transactions on Nuclear Science, 2016.02
48
Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation
I. Song, S. Jung, N. E. Lourenco, U. S. Raghunathan, Z. E. Fleetwood, M.-K. Cho, N. J.-H. Roche, A. Khachatrian, J. H. Warner, S. P. Buchner, D. McMorrow, P. Paki, J. D. Cressler
IEEE Transactions on Nuclear Science, 2015.12
49
The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits
J. Seungwoo, I. Song, Z. E. Fleetwood, U. Raghunathan, N. E. Lourenco, M. A. Oakley, B. R. Wier, N. J.-H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki, J. D. Cressler
IEEE Transactions on Nuclear Science, 2015.12
50
An Investigation of the SET Response of Devices and Differential Pairs in a 32-nm SOI CMOS Technology
Z. E. Fleetwood, N. E. Lourenco, A. Ildefonso, T. D. England, I. Song, R. L. Schmid, A. S. Cardoso, S. Jung, N. J.-H. Roche, A. Khachatrian, S. P. Buchner, D. McMorrow, J. Warner, P. Paki, J. D. Cressler