Single-Event Effects in a W-band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology
S. Zeinolabedinzadeh, I. Song, U. S. Raghunathan, N. E. Lourenco, Z. E. Fleetwood, M. A. Oakley, A. S. Cardoso, N. J.-H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. H. Warner, P. Paki-Amouzou, J. D. Cressler
IEEE Transactions on Nuclear Science, 2015.12
52
Advantages of Utilizing Through-Silicon-Vias in SiGe HBT RF Low-Noise Amplifier Design
I. Song, M.-K. Cho, S. Jung, I. Ju, J. D. Cressler
Microwave and Optical Technology Letters, 2015.11
53
Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs
I. Song, S. Jung, N. E. Lourenco, U. S. Raghunathan, Z. E. Fleetwood, S. Zeinolabedinzadeh, T. B. Gebremariam, F. Inanlou, N. J.-H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. S. Melinger, J. H. Warner, P. Paki-Amouzou, J. D. Cressler
IEEE Transactions on Nuclear Science, 2014.12
54
An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits
S. Jung, N. E. Lourenco, I. Song, M. A. Oakley, T. D. England, R. Arora, A. Cardoso, N. J.-H. Roche, A. Khachatrian, D. McMorrow, S. P. Buchner, J. S. Melinger, J. H. Warner, P. Paki-Amouzou, J. A. Babcock, J. D. Cressler
IEEE Transactions on Nuclear Science, 2014.12
55
Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs
Z. E. Fleetwood, A. S. Cardoso, I. Song, E. Wilcox, N. E. Lourenco, S. D. Phillips, R. Arora, P. Paki-Amouzou, J. D. Cressler
IEEE Transactions on Nuclear Science, 2014.12
56
Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator
F. Inanlou, N. E. Lourenco, Z. E. Fleetwood, I. Song, D. C. Howard, A. Cardoso, S. Zeinolabedinzadeh, E. Zhang, C. X. Zhang, P. Paki-Amouzou, J. D. Cressler
IEEE Transactions on Nuclear Science, 2014.12
57
fmax Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor
H.-S. Jhon, J.-H. Lee, J. Lee, B. Oh, I. Song, Y. Yun, B.-G. Park, J. D. Lee, H. Shin
IEEE Electron Device Letters, 2009.12
58
A Simple Figure of Merit of RF MOSFET for Low Noise Amplifier design
I. Song, J. Jeon, H.-S. Jhon, J. Kim, B.-G. Park, J. D. Lee, H. Shin
IEEE Electron Device Letters, 2008.12
59
Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design
J. Jeon, I. Song, J. D. Lee, B.-G. Park, H. Shin
IEICE Transactions on Electronics, 2009.05
60
0.7 V Supply Highly Linear Subthreshold Low-Noise Amplifier Design for 2.4 GHz Wireless Sensor Network Applications