Structural origin of temperature dependent ferroelectricity, Ch. 5.1. in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0.
1970
원저자: Min Hyuk Park | Woodhead publishing, Duxford, CB22 4QH, United Kingdom
Effect of surface/interface energy and stress on the ferroelectric properties, Ch. 3.5. in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0.
Impact of Zr content in atomic layer deposited Hf1-xZrxO2 thin films, Ch. 3.2. in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0.
Dopants in atomic layer deposited HfO2 thin films, Ch. 3.1. in "Ferroelectricity in Doped Hafnium Oxide", Woodhead publishing, Duxford, CB22 4QH, United Kingdom, ISBN: 978-0-08-102430-0.
Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View, Ch. IV-2 in “Ferroelectric-Gate Field Effect Transistor Memories”, 295-310, Springer-Verlag Berlin, Berlin, Germany.
2016
원저자: Min Hyuk Park | Springer-Verlag Berlin, Berlin, Germany