발행물

전체 논문

155

151

Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire
J. H. Lee, J. T. Oh, J. S. Park, J. W. Kim, Y. C. Kim, J. W. Lee, H. K. Cho
Physica Status Solidi (c), 2006

152

Recovery of dry-etch-induced surface damage on Mg-doped GaN by NH3 ambient thermal annealing
Y. T. Moon, D. J. Kim, J. S. Park, J. T. Oh, J. M. Lee, S. J. Park
J. Vac. Sci. Technol. B, 2004

153

Growth-Temperature Dependent Property of GaN Barrier Layer and Its Effect on InGaN/GaN Multiple Quantum Well Light-Emitting Diodes
Y. T. Moon, H. H. Lee, D. Y. Noh, S. J. Park, D. J. Kim, J. S. Park, J. T. Oh
J. Kor, Phys. Soc., 2003

154

Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx
Y. T. Moon, D. J. Kim, J. S. Park, J. T. Oh, Y. S. Kim, N. M. Park, B. H. Kim, S. J. Park
Journal of Crystal Growth, 2002

155

Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots
Y. T. Moon, D. J. Kim, J. S. Park, J. T. Oh, J. M. Lee, T. W. Ok, H. S. Kim, S. J. Park
Applied Physics Letters, 2001