발행물

전체 논문

146

51

200-mm Si CMOS Process-Compatible Integrated Passive Stack for Millimeter-Wave Monolithic 3-D integration
M. Park, J. Song, J. Jeong, J. -T. Lim, J. -H. Song, W. -C. Lee, G. Sim, H. Cho, D. Yoo, M. Kang, H. Ko, J. Lee, K. Yang, C. -Y. Kim, Y. Kim, W. -S. Sul, S. -H. Kim, J. Lee*
IEEE Transactions on Electron Devices, 2023

52

Examination of Ferroelectric FET for “Cold” Nonvolatile Memory
S. -H. Kuk, S. Han, B. -H. Kim, J. -P. Kim, S. -K. Kim, S. -Y. Ahn, M. Park, J. -H. Han*, S. -H. Kim*
IEEE Transactions on Electron Devices, 2023

53

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films
J. Jeon+, S. -H. Kuk+, A. -J. Cho, S. -H. Beak, S. -H. Kim*, S. -K. Kim*
Applied Physics Letters, 2023

54

Low-Loss and High-Confinement Photonic Platform based on Germanium-on-Insulator at Mid-Infrared Range for Optical Sensing
J. Lim, J. Shim, I. Kim, S. -K. Kim, H. -R. Lim, S. -Y. Ahn, J. Park, D. -M. Geum, S. -H. Kim*
IEEE Journal of Lightwave Technology, 2023

55

Effect of Scandium Insertion into the Gate Stack of Ferroelectric Field-Effect Transistors
B. -H. Kim, S. -H. Kuk, S. -K. Kim, J. -P. Kim, Y. -J. Suh, J. Jeong, D. -M. Geum, S. -H. Baek, S. -H. Kim*
IEEE Transactions on Electron Devices, 2023

56

Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Devices for Monolithic 3D RF Applications
J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, S.- H. Kim*
IEEE Electron Device Letters, 2023

57

Oxygen Scavenging in HfZrOx-based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement
B- H. Kim, S. -H. Kuk, S. -K. Kim, J. -P. Kim, Y. -J. Suh, J. Jeong, D. -M. Geum, S. -H. Baek, S. -H. Kim*
Advanced Electronic Materials, 2023

58

Ultra-Low-Current Driven InGaN Blue Micro Light-Emitting Diodes for Electrically Efficient and Self-Heating Relaxed Microdisplay
W. -J. Baek, J. -H. Park, J. Shim, B. -H. Kim, S. Park, H. -S. Kim, D. -M. Geum*, and S. -H. Kim*
Nature communications, 2023

59

Dielectric-Engineered High-speed, Low-power, Highly-reliable Charge Trap Flash-based Synaptic Device for Neuromorphic Computing Beyond Inference
J. -P. Kim, S. -K. Kim, S. Park, S- H. Kuk, T. Kim, B. -H. Kim, S. -H. Ahn, Y. -H. Cho, Y. Jeong, S. -Y. Choi, S.- H. Kim*
Nano Letters, 2023

60

Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays
T. Jin†, S. -H. Kim†, J. -H. Han†, D. -H. Ahn, S. -U. An, T. -H. Noh, X. Sun, C. -J. Kim, J. Park, and Y. Kim*
Nanoscale Advances, 2023