High Mobility CMOS Technologies using III-V/Ge Channels on Si platform
S. Takagi*, S.-H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka
Solid State Electronics, 2013
142
High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain
S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
Applied Physics Express, 2011
143
Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy
S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
Applied Physics Letters, 2011
144
Sub-10-nm extremely-thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers
M. Yokoyama*, R. Iida, S.-H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi
IEEE Electron Device Letters, 2011
145
AC Response Analysis of C-V Curves and Quantitative Analysis of Conductance Curves in Al2O3/InP Interfaces
N. Taoka*, M. Yokoyama, S. H. Kim, T. Hoshii, R. Iida, S. Lee, R. Suzuki, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
Microelectronic Engineering, 2011
146
Self-algined metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy
S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi