Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxidesemiconductor structure with low interface trap density and low gate leakage current density

Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors

In0.53Ga0.47As Metal-oxide-semiconductor Field-effect Transistors with Self-Aligned Metal Source/Drain using Co-InGaAs Alloys

Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers

Direct Wafer Bonding Technology for Large-scale InGaAs-On-Insulator Transistors

Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

High Performance Tri-gate Extremely-thin-Body InAs-on-Insulator MOSFETs with high short channel effect immunity and Vth tunability

Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

Self-aligned Ni–GaSb source/drain junctions for GaSb p-channel metal-oxide- semiconductor field-effect transistors